Microstructure and dielectric properties of LPCVD/CVI-SiBCN ceramics annealed at different temperatures

Jianping Li; Mingxi Zhao; Yongsheng Liu; Nan Chai; Fang Ye; Hailong Qin; Laifei Cheng; Litong Zhang

doi:10.3390/ma10060655

Microstructure and dielectric properties of LPCVD/CVI-SiBCN ceramics annealed at different temperatures

Jianping Li
, Mingxi Zhao
, Yongsheng Liu
, Nan Chai
, Fang Ye
, Hailong Qin
, Laifei Cheng
, Litong Zhang

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

SiBCN ceramics were introduced into porous Si₃N₄ ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N₂ atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si₃N₄ and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si₃N₄. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries.

Original language	English
Article number	655
Journal	Materials
Volume	10
Issue number	6
DOIs	https://doi.org/10.3390/ma10060655
State	Published - 2017

Keywords

Chemical vapor deposition and infiltration
Dielectric properties
Electromagnetic wave absorbing properties
Heat treatment
Siliconboron carbonitride ceramic

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10.3390/ma10060655

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title = "Microstructure and dielectric properties of LPCVD/CVI-SiBCN ceramics annealed at different temperatures",

abstract = "SiBCN ceramics were introduced into porous Si3N4 ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N2 atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si3N4 and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si3N4. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries.",

keywords = "Chemical vapor deposition and infiltration, Dielectric properties, Electromagnetic wave absorbing properties, Heat treatment, Siliconboron carbonitride ceramic",

author = "Jianping Li and Mingxi Zhao and Yongsheng Liu and Nan Chai and Fang Ye and Hailong Qin and Laifei Cheng and Litong Zhang",

note = "Publisher Copyright: {\textcopyright} 2017 by the authors.",

year = "2017",

doi = "10.3390/ma10060655",

language = "英语",

volume = "10",

journal = "Materials",

issn = "1996-1944",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "6",

}

TY - JOUR

T1 - Microstructure and dielectric properties of LPCVD/CVI-SiBCN ceramics annealed at different temperatures

AU - Li, Jianping

AU - Zhao, Mingxi

AU - Liu, Yongsheng

AU - Chai, Nan

AU - Ye, Fang

AU - Qin, Hailong

AU - Cheng, Laifei

AU - Zhang, Litong

PY - 2017

Y1 - 2017

N2 - SiBCN ceramics were introduced into porous Si3N4 ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N2 atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si3N4 and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si3N4. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries.

AB - SiBCN ceramics were introduced into porous Si3N4 ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N2 atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si3N4 and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si3N4. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries.

KW - Chemical vapor deposition and infiltration

KW - Dielectric properties

KW - Electromagnetic wave absorbing properties

KW - Heat treatment

KW - Siliconboron carbonitride ceramic

UR - https://www.scopus.com/pages/publications/85020843964

U2 - 10.3390/ma10060655

DO - 10.3390/ma10060655

M3 - 文章

AN - SCOPUS:85020843964

SN - 1996-1944

VL - 10

JO - Materials

JF - Materials

IS - 6

M1 - 655

ER -

Microstructure and dielectric properties of LPCVD/CVI-SiBCN ceramics annealed at different temperatures

Abstract

Keywords

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