Abstract
Achieving high dielectric constant with stable dielectric response over wide temperature and frequency ranges remains a major challenge for advanced dielectric ceramics due to the mutual constraint among properties. In this work, high‐entropy perovskite ceramics (Ca0.2Sr0.2Ba0.2Mg0.2Bi0.1Na0.1) (Ti1−xZrx)O3 (HEC6‐ZT) were designed by combining high-entropy with Zr4+ doping. Structural analysis confirms that all compositions form a single-phase perovskite structure. Increasing Zr4+ content induced lattice distortion, grain coarsening, and enhanced relaxor behavior, resulting in a non-monotonic evolution of dielectric properties. This evolution is due to the competition between enhanced compositional disorder and reduced intrinsic polarization. Consequently, HEC6-ZT ceramics with x = 0.1 doping showed the optimized dielectric properties, exhibiting high dielectric constant (981 at 1 kHz) and low dielectric loss (0.067), with excellent X7R specification and frequency stability (F(1M) = 0.15 from 1 kHz to 1 MHz). These results demonstrate the high-entropy and doping strategies provide an effective approach for balancing high dielectric constant and response stability, offering promising candidates for stable dielectric components in advanced electronic devices.
| Original language | English |
|---|---|
| Article number | 419015 |
| Journal | Physica B: Condensed Matter |
| Volume | 740 |
| DOIs | |
| State | Published - 15 Oct 2026 |
Keywords
- B-site doping
- Dielectric properties
- High-entropy
- Perovskite structure
- Relaxor ferroelectrics
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