Mass flux of ZnSe-N-H-Cl chemical vapor transport (CVT) system

Changyou Liu; Tao Hu; Wanqi Jie

doi:10.1016/j.jcrysgro.2009.12.027

Mass flux of ZnSe-N-H-Cl chemical vapor transport (CVT) system

Changyou Liu
, Tao Hu
, Wanqi Jie

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The vapor transport properties in ZnSe-N-H-Cl CVT systems are interpreted based on the one-dimensional diffusion-limited model. The growth rate J is calculated to be 3.5-3.7×10^-9 mol cm^-2 s^-1 at the temperature difference ΔT of 5 K between the source and the growth ends in the systems of ZnSe-NH₄Cl, ZnSe-NH₄Cl+Se and ZnSe-ZnCl₂·2NH₄Cl (AZC-II)+Se. The values related to the critical stability parameters of surface, J_crit and ΔT_crit, are about 2.6×10^-9 mol cm^-2 s^-1 and 3.5 K, respectively. J is not dependent on the amount of NH₄Cl among the concentration range from 0.5 to 5.0 mg mL^-1. The deviation from stoichiometry of the source material hardly affects on J when AZC-II and Se were added. The experimental investigations of transport rate are carried out using the seeded and un-seeded ampoules with various tip angles. The experimental growth rate J_exp and its critical values well agree with the calculated results. A critical temperature difference up to 5-7 K is obtained in the vertical manner growth.

Original language	English
Pages (from-to)	933-938
Number of pages	6
Journal	Journal of Crystal Growth
Volume	312
Issue number	7
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.12.027
State	Published - 15 Mar 2010

Keywords

A1. Diffusion
A1. Mass transfer
A2. Growth from vapor
B1. Zinc compounds

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10.1016/j.jcrysgro.2009.12.027

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title = "Mass flux of ZnSe-N-H-Cl chemical vapor transport (CVT) system",

abstract = "The vapor transport properties in ZnSe-N-H-Cl CVT systems are interpreted based on the one-dimensional diffusion-limited model. The growth rate J is calculated to be 3.5-3.7×10-9 mol cm-2 s-1 at the temperature difference ΔT of 5 K between the source and the growth ends in the systems of ZnSe-NH4Cl, ZnSe-NH4Cl+Se and ZnSe-ZnCl2·2NH4Cl (AZC-II)+Se. The values related to the critical stability parameters of surface, Jcrit and ΔTcrit, are about 2.6×10-9 mol cm-2 s-1 and 3.5 K, respectively. J is not dependent on the amount of NH4Cl among the concentration range from 0.5 to 5.0 mg mL-1. The deviation from stoichiometry of the source material hardly affects on J when AZC-II and Se were added. The experimental investigations of transport rate are carried out using the seeded and un-seeded ampoules with various tip angles. The experimental growth rate Jexp and its critical values well agree with the calculated results. A critical temperature difference up to 5-7 K is obtained in the vertical manner growth.",

keywords = "A1. Diffusion, A1. Mass transfer, A2. Growth from vapor, B1. Zinc compounds",

author = "Changyou Liu and Tao Hu and Wanqi Jie",

year = "2010",

month = mar,

day = "15",

doi = "10.1016/j.jcrysgro.2009.12.027",

language = "英语",

volume = "312",

pages = "933--938",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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T1 - Mass flux of ZnSe-N-H-Cl chemical vapor transport (CVT) system

AU - Liu, Changyou

AU - Hu, Tao

AU - Jie, Wanqi

PY - 2010/3/15

Y1 - 2010/3/15

N2 - The vapor transport properties in ZnSe-N-H-Cl CVT systems are interpreted based on the one-dimensional diffusion-limited model. The growth rate J is calculated to be 3.5-3.7×10-9 mol cm-2 s-1 at the temperature difference ΔT of 5 K between the source and the growth ends in the systems of ZnSe-NH4Cl, ZnSe-NH4Cl+Se and ZnSe-ZnCl2·2NH4Cl (AZC-II)+Se. The values related to the critical stability parameters of surface, Jcrit and ΔTcrit, are about 2.6×10-9 mol cm-2 s-1 and 3.5 K, respectively. J is not dependent on the amount of NH4Cl among the concentration range from 0.5 to 5.0 mg mL-1. The deviation from stoichiometry of the source material hardly affects on J when AZC-II and Se were added. The experimental investigations of transport rate are carried out using the seeded and un-seeded ampoules with various tip angles. The experimental growth rate Jexp and its critical values well agree with the calculated results. A critical temperature difference up to 5-7 K is obtained in the vertical manner growth.

AB - The vapor transport properties in ZnSe-N-H-Cl CVT systems are interpreted based on the one-dimensional diffusion-limited model. The growth rate J is calculated to be 3.5-3.7×10-9 mol cm-2 s-1 at the temperature difference ΔT of 5 K between the source and the growth ends in the systems of ZnSe-NH4Cl, ZnSe-NH4Cl+Se and ZnSe-ZnCl2·2NH4Cl (AZC-II)+Se. The values related to the critical stability parameters of surface, Jcrit and ΔTcrit, are about 2.6×10-9 mol cm-2 s-1 and 3.5 K, respectively. J is not dependent on the amount of NH4Cl among the concentration range from 0.5 to 5.0 mg mL-1. The deviation from stoichiometry of the source material hardly affects on J when AZC-II and Se were added. The experimental investigations of transport rate are carried out using the seeded and un-seeded ampoules with various tip angles. The experimental growth rate Jexp and its critical values well agree with the calculated results. A critical temperature difference up to 5-7 K is obtained in the vertical manner growth.

KW - A1. Diffusion

KW - A1. Mass transfer

KW - A2. Growth from vapor

KW - B1. Zinc compounds

UR - https://www.scopus.com/pages/publications/77249142336

U2 - 10.1016/j.jcrysgro.2009.12.027

DO - 10.1016/j.jcrysgro.2009.12.027

M3 - 文章

AN - SCOPUS:77249142336

SN - 0022-0248

VL - 312

SP - 933

EP - 938

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 7

ER -

Mass flux of ZnSe-N-H-Cl chemical vapor transport (CVT) system

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Keywords

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