Manipulating the intrinsic vacancies for enhanced thermoelectric performance in Eu2ZnSb2 Zintl phase

  • Chen Chen
  • , Xiaofang Li
  • , Wenhua Xue
  • , Fengxian Bai
  • , Yifang Huang
  • , Honghao Yao
  • , Shan Li
  • , Zongwei Zhang
  • , Xinyu Wang
  • , Jiehe Sui
  • , Xingjun Liu
  • , Feng Cao
  • , Yumei Wang
  • , Qian Zhang

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

Zintl compounds have caught great attention in thermoelectric applications due to their intrinsic “electron-crystal, phonon-glass” structures. Previous studies suggested that Zintl-phase Eu2ZnSb2 was a promising thermoelectric material due to its ultralow thermal conductivity. In this work, we used Ag to regulate the Zn–Sb framework for enhanced electrical properties, and prepared Eu2Zn1-0.5xAgxSb2 (x = 0.02, 0.06, and 0.1) by ball milling and spark plasma sintering. The additional Ag fills the initial vacancies and causes both increased carrier concentration and mobility. The maximum ZT reaches ~0.92 at 823 K for Eu2Zn0.97Ag0.06Sb2. By further reducing the Zn content, the carrier concentration increases close to the optimum value, and a peak ZT value of ~1.1 at 823 K was achieved for Eu2Zn0.95Ag0.06Sb2.

Original languageEnglish
Article number104771
JournalNano Energy
Volume73
DOIs
StatePublished - Jul 2020
Externally publishedYes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • Carrier mobility
  • EuZnSb
  • Intrinsic vacancies
  • Thermoelectric
  • Zintl phase

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