Abstract
Luminescence centers were created in the CsI host crystals by annealing of Pb-doped crystals at 400°C in air. It was found that the excitation spectra of these luminescence centers are coincided well with the excitation absorption of a series of compounds in the Cs-Pb-I system, which indicates that they are attributed to the creation of CsPbI3, CsPbI6 and other aggregates in the annealing process. The emission spectra of Pb:CsI crystals were measured in the 10-30K temperature range by 360nm and 410nm excitation respectively. The relative intensities of emission bands depend strongly on annealing time, which implies that the creation and transformation of various Pb-based aggregates in Pb:CsI crystals tend to active around 400°C annealing temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 419-420 |
| Number of pages | 2 |
| Journal | Wuji Cailiao Xuebao/Journal of Inorganic Materials |
| Volume | 15 |
| Issue number | 3 |
| State | Published - 2000 |
Keywords
- Luminescence properties
- Pb-doped CsI
- Pb-based aggregates
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