Abstract
Electrically pumped random lasers are realized in ZnO nanocrystallite films in a simple metal-oxide-semiconductor structure. By introducing an i-ZnO layer, a threshold current of 6.5 mA is obtained. The reported results provide a simple route to electrically pumped random lasing (see figure) with relatively low threshold, a significant step towards the future applications of this kind of laser. (Fig. Represented)
| Original language | English |
|---|---|
| Pages (from-to) | 1877-1881 |
| Number of pages | 5 |
| Journal | Advanced Materials |
| Volume | 22 |
| Issue number | 16 |
| DOIs | |
| State | Published - 22 Apr 2010 |
| Externally published | Yes |
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