TY - JOUR
T1 - Large-scale synthesis of SiC/PyC core-shell structure nanowires via chemical liquid-vapor deposition
AU - He, Qinchuan
AU - Li, Hejun
AU - Yin, Xuemin
AU - Lu, Jinhua
N1 - Publisher Copyright:
© 2020 Elsevier Ltd and Techna Group S.r.l.
PY - 2021/1/1
Y1 - 2021/1/1
N2 - In carbon/carbon (C/C) composites, SiC/PyC core-shell structure nanowires were successfully fabricated via chemical liquid-vapor deposition (CLVD). The influences of heat-treatment temperature on the microstructure and composition of SiC nanowires were studied, and meanwhile the growth mechanism of SiC nanowires was discussed. Additionally, the microstructure and morphology of SiC/PyC core-shell structure nanowires were also investigated. The results displayed that the low heat-treatment temperature could not meet the requirements of SiC nanowires growth, but the too high temperature made the nanowires appear agglomerate easily. Only when the heat-treatment temperature was 1800 °C, SiC nanowires possessed a uniform distribution. The diameter of SiC nanowire was about 300 nm, and there was a SiO2 layer with the thickness of about 1 nm existing on the surface of SiC nanowire. The growth behavior of SiC nanowire was governed by vapor-solid (V–S) mechanism. After the PyC deposition, SiC/PyC core-shell structure nanowires were constructed, and the nanowires were about 450 nm in diameter. These nanowires displayed a core-shell structure with three layers, which were SiC nanowire core, SiO2 interlayer and PyC shell, respectively. Meanwhile, SiC/PyC core-shell structure nanowires connected the matrices with each other, and the core-shell structure nanowires generated a stable network.
AB - In carbon/carbon (C/C) composites, SiC/PyC core-shell structure nanowires were successfully fabricated via chemical liquid-vapor deposition (CLVD). The influences of heat-treatment temperature on the microstructure and composition of SiC nanowires were studied, and meanwhile the growth mechanism of SiC nanowires was discussed. Additionally, the microstructure and morphology of SiC/PyC core-shell structure nanowires were also investigated. The results displayed that the low heat-treatment temperature could not meet the requirements of SiC nanowires growth, but the too high temperature made the nanowires appear agglomerate easily. Only when the heat-treatment temperature was 1800 °C, SiC nanowires possessed a uniform distribution. The diameter of SiC nanowire was about 300 nm, and there was a SiO2 layer with the thickness of about 1 nm existing on the surface of SiC nanowire. The growth behavior of SiC nanowire was governed by vapor-solid (V–S) mechanism. After the PyC deposition, SiC/PyC core-shell structure nanowires were constructed, and the nanowires were about 450 nm in diameter. These nanowires displayed a core-shell structure with three layers, which were SiC nanowire core, SiO2 interlayer and PyC shell, respectively. Meanwhile, SiC/PyC core-shell structure nanowires connected the matrices with each other, and the core-shell structure nanowires generated a stable network.
KW - CLVD process
KW - Microstructure
KW - SiC nanowires
KW - SiC/PyC core-shell structure nanowires
UR - http://www.scopus.com/inward/record.url?scp=85089962436&partnerID=8YFLogxK
U2 - 10.1016/j.ceramint.2020.08.157
DO - 10.1016/j.ceramint.2020.08.157
M3 - 文章
AN - SCOPUS:85089962436
SN - 0272-8842
VL - 47
SP - 500
EP - 509
JO - Ceramics International
JF - Ceramics International
IS - 1
ER -