Abstract
Radiation detectors with different thickness are needed to detect gamma rays with various energies. In this paper, a post-growth annealing method was used to improve the properties of CdMnTe:In (CMT:In) crystals with different thickness for gamma-ray detectors. The results indicated that Te inclusions in CMT:In crystals with different thickness were reduced remarkably after annealing. Both the resistivity and IR transmittance of annealed CMT:In crystals with different thickness increased obviously, which suggested that the crystal quality was improved. For the detectors fabricated by annealed CMT:In slices with 1 mm, 2 mm and 5 mm thickness, the energy resolutions were enhanced about 252%, 193% and 141%, respectively. And (μτ)e values were enhanced about 80%, 80% and 76%, respectively. The performance of the detectors was greatly improved after annealing.
| Original language | English |
|---|---|
| Pages (from-to) | 94-101 |
| Number of pages | 8 |
| Journal | Journal of Crystal Growth |
| Volume | 483 |
| DOIs | |
| State | Published - 1 Feb 2018 |
Keywords
- A1. Characterization
- A2. Bridgman technique
- B1. Cadmium compounds
- B2 Semiconducting II–VI materials
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