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Investigation of effective annealing on CdMnTe:In crystals with different thickness for gamma-ray detectors

  • Pengfei Yu
  • , Yadong Xu
  • , Yongren Chen
  • , Jie Song
  • , Yi Zhu
  • , Meijing Zhang
  • , Binggang Zhang
  • , Yu Wang
  • , Wei Li
  • , Lijun Luan
  • , Yuanyuan Du
  • , Jing Ma
  • , Jiahong Zheng
  • , Zhuo Li
  • , Min Bai
  • , Hui Li
  • , Wanqi Jie
  • Chang'an University
  • Northwestern Polytechnical University Xian
  • CAS - Institute of High Energy Physics

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Radiation detectors with different thickness are needed to detect gamma rays with various energies. In this paper, a post-growth annealing method was used to improve the properties of CdMnTe:In (CMT:In) crystals with different thickness for gamma-ray detectors. The results indicated that Te inclusions in CMT:In crystals with different thickness were reduced remarkably after annealing. Both the resistivity and IR transmittance of annealed CMT:In crystals with different thickness increased obviously, which suggested that the crystal quality was improved. For the detectors fabricated by annealed CMT:In slices with 1 mm, 2 mm and 5 mm thickness, the energy resolutions were enhanced about 252%, 193% and 141%, respectively. And (μτ)e values were enhanced about 80%, 80% and 76%, respectively. The performance of the detectors was greatly improved after annealing.

Original languageEnglish
Pages (from-to)94-101
Number of pages8
JournalJournal of Crystal Growth
Volume483
DOIs
StatePublished - 1 Feb 2018

Keywords

  • A1. Characterization
  • A2. Bridgman technique
  • B1. Cadmium compounds
  • B2 Semiconducting II–VI materials

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