Abstract
Cd1-xMgxTe single crystals were annealed by Te atmosphere, with a focus on the effect of annealing time on the crystal properties and detector performance. The density of Te inclusions remained stable within the range of 2.15×104-2.22×104 cm2. With the increase of annealing time, the content of each element in the crystal was closer to the stoichiometric composition Cd0.95Mg0.05Te. No additional surface oxidation was observed. The resistivity first increased and then decreased, reaching a maximum of 6.49×1010 Ω·cm, which was an increase of three orders of magnitude. After 240 h of annealing, the resistivity decreased to 1.65×1010 Ω·cm. The optimal annealing conditions were 120 h at 773 K. The detector performance was significantly improved. The electron mobility was enhanced by 7 times, increasing from 52.27 to 366.05 cm2/(V·s). The energy resolution was improved by 1.9 times, reaching 18.4%. And the carrier mobility-lifetime product was increased by 1.7 times, rising from 8.57×105 to 1.42×10-4 cm2/V.
| Original language | English |
|---|---|
| Journal | IEEE Transactions on Nuclear Science |
| DOIs | |
| State | Accepted/In press - 2026 |
Keywords
- Annealing
- CdMgTe single crystal
- resistivity
- room temperature radiation detector
- Te atmosphere
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