Abstract
The influence of solidification rate on the solid-liquid interface of Si-Ta alloy was studied by the zero power method. The results show that the solid-liquid interface morphology has the following evolution processing: planar interface→shallow cell interface→cell interface→shallow cell interface→planar interface when the solidification rate varies from 0.3 mm/min to 9.0 mm/min. At the lower solidification rates, the experiment results can be consistent with Jackson-Hunt theory well. However, there is a deviation between the theory calculation and the experiment at the higher solidification rates. This is caused by the change of the thermodynamics and kinetics, and the solid-liquid interface can get to planar interface at the solidification rate V=5.0 mm/min.
| Original language | English |
|---|---|
| Pages (from-to) | 60-64 |
| Number of pages | 5 |
| Journal | Cailiao Gongcheng/Journal of Materials Engineering |
| Issue number | 8 |
| State | Published - Aug 2012 |
Keywords
- Directional solidification
- Electron beam floating zone melting
- Solid-liquid interface
- Solidification rate
Fingerprint
Dive into the research topics of 'Influence of solidification rate on solid-liquid interface of Si-Ta alloy'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver