Influence of different x values on dielectric properties of β-Si 6-xAlxOxN8-x ceramics

J. Q. Li; W. C. Zhou; F. Luo; Z. F. Zhu; J. Z. Ma

doi:10.1179/143307510X12820854749231

Influence of different x values on dielectric properties of β-Si _6-xAl_xO_xN_8-x ceramics

J. Q. Li
, W. C. Zhou
, F. Luo
, Z. F. Zhu
, J. Z. Ma

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A series of Si_6-xAl_xO_xN_8-x with different x values (x=0-4.2) was obtained by pressureless sintering using Al₂O₃ and AlN as additives. The influences of different x values on the dielectric properties of Si_6-xAl_xO _xN_8-x were investigated in detail. It was found that the difference in the dielectric properties of Si_6-xAl_xO _xN_8-x was mainly due to the simultaneous dissolution of Al₂O₃ and AlN in β-Si₃N₄. The dielectric constant increases with equivalent substitution of Al-O for Si-N. The high dielectric constant could be attributed to the ionic relaxation polarisation.

Original language	English
Pages (from-to)	423-425
Number of pages	3
Journal	Materials Research Innovations
Volume	14
Issue number	5
DOIs	https://doi.org/10.1179/143307510X12820854749231
State	Published - 1 Nov 2010

Keywords

β-SiAlON
Dielectric properties
Ionic relaxation polarisation

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10.1179/143307510X12820854749231

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title = "Influence of different x values on dielectric properties of β-Si 6-xAlxOxN8-x ceramics",

abstract = "A series of Si6-xAlxOxN8-x with different x values (x=0-4.2) was obtained by pressureless sintering using Al2O3 and AlN as additives. The influences of different x values on the dielectric properties of Si6-xAlxO xN8-x were investigated in detail. It was found that the difference in the dielectric properties of Si6-xAlxO xN8-x was mainly due to the simultaneous dissolution of Al2O3 and AlN in β-Si3N4. The dielectric constant increases with equivalent substitution of Al-O for Si-N. The high dielectric constant could be attributed to the ionic relaxation polarisation.",

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author = "Li, \{J. Q.\} and Zhou, \{W. C.\} and F. Luo and Zhu, \{Z. F.\} and Ma, \{J. Z.\}",

year = "2010",

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doi = "10.1179/143307510X12820854749231",

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journal = "Materials Research Innovations",

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TY - JOUR

T1 - Influence of different x values on dielectric properties of β-Si 6-xAlxOxN8-x ceramics

AU - Li, J. Q.

AU - Zhou, W. C.

AU - Luo, F.

AU - Zhu, Z. F.

AU - Ma, J. Z.

PY - 2010/11/1

Y1 - 2010/11/1

N2 - A series of Si6-xAlxOxN8-x with different x values (x=0-4.2) was obtained by pressureless sintering using Al2O3 and AlN as additives. The influences of different x values on the dielectric properties of Si6-xAlxO xN8-x were investigated in detail. It was found that the difference in the dielectric properties of Si6-xAlxO xN8-x was mainly due to the simultaneous dissolution of Al2O3 and AlN in β-Si3N4. The dielectric constant increases with equivalent substitution of Al-O for Si-N. The high dielectric constant could be attributed to the ionic relaxation polarisation.

AB - A series of Si6-xAlxOxN8-x with different x values (x=0-4.2) was obtained by pressureless sintering using Al2O3 and AlN as additives. The influences of different x values on the dielectric properties of Si6-xAlxO xN8-x were investigated in detail. It was found that the difference in the dielectric properties of Si6-xAlxO xN8-x was mainly due to the simultaneous dissolution of Al2O3 and AlN in β-Si3N4. The dielectric constant increases with equivalent substitution of Al-O for Si-N. The high dielectric constant could be attributed to the ionic relaxation polarisation.

KW - β-SiAlON

KW - Dielectric properties

KW - Ionic relaxation polarisation

UR - https://www.scopus.com/pages/publications/78649385548

U2 - 10.1179/143307510X12820854749231

DO - 10.1179/143307510X12820854749231

M3 - 文章

AN - SCOPUS:78649385548

SN - 1432-8917

VL - 14

SP - 423

EP - 425

JO - Materials Research Innovations

JF - Materials Research Innovations

IS - 5

ER -

Influence of different x values on dielectric properties of β-Si _6-xAl_xO_xN_8-x ceramics

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Keywords

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