Influence of Al Doping on the Preparation and Properties of Ti3SiC2 Ceramics

Zhimin Li; Maolin Zhang; Yangxi Yan; Yunxia Huang; Fa Luo; Jinbiao Pang

Influence of Al Doping on the Preparation and Properties of Ti₃SiC₂ Ceramics

Zhimin Li, Maolin Zhang, Yangxi Yan, Yunxia Huang, Fa Luo, Jinbiao Pang

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Al-doped Ti₃SiC₂ ceramics were prepared by hot-pressing sintering, and the phase composition, microstructure, oxidation resistance and microwave dielectric properties of the prepared samples were characterized by X-ray diffractometer, scanning electron microscope, energy dispersive spectroscopy and vector network analyzer, respectively. Results show that the prepared ceramic with Al doping has higher mass fraction of Ti₃SiC₂, and the as-prepared ceramic grains present a typical laminated appearance. Through the Al doping approach, the oxidation resistance of Ti₃SiC₂ ceramic at 1200℃ is significantly improved, and its real component ε' and imaginary component ε″ of permittivity are greatly increased, which are 60.8 and 6.28 in average in the frequency range of 8.2~12.4 GHz, respectively.

Original language	English
Pages (from-to)	468-472
Number of pages	5
Journal	Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
Volume	46
Issue number	2
State	Published - 1 Feb 2017

Keywords

Al doping
Hot-pressing sintering
Microwave dielectric property
Oxidation resistance
TiSiC ceramic

Cite this

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title = "Influence of Al Doping on the Preparation and Properties of Ti3SiC2 Ceramics",

abstract = "Al-doped Ti3SiC2 ceramics were prepared by hot-pressing sintering, and the phase composition, microstructure, oxidation resistance and microwave dielectric properties of the prepared samples were characterized by X-ray diffractometer, scanning electron microscope, energy dispersive spectroscopy and vector network analyzer, respectively. Results show that the prepared ceramic with Al doping has higher mass fraction of Ti3SiC2, and the as-prepared ceramic grains present a typical laminated appearance. Through the Al doping approach, the oxidation resistance of Ti3SiC2 ceramic at 1200℃ is significantly improved, and its real component ε' and imaginary component ε″ of permittivity are greatly increased, which are 60.8 and 6.28 in average in the frequency range of 8.2~12.4 GHz, respectively.",

keywords = "Al doping, Hot-pressing sintering, Microwave dielectric property, Oxidation resistance, TiSiC ceramic",

author = "Zhimin Li and Maolin Zhang and Yangxi Yan and Yunxia Huang and Fa Luo and Jinbiao Pang",

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TY - JOUR

T1 - Influence of Al Doping on the Preparation and Properties of Ti3SiC2 Ceramics

AU - Li, Zhimin

AU - Zhang, Maolin

AU - Yan, Yangxi

AU - Huang, Yunxia

AU - Luo, Fa

AU - Pang, Jinbiao

PY - 2017/2/1

Y1 - 2017/2/1

N2 - Al-doped Ti3SiC2 ceramics were prepared by hot-pressing sintering, and the phase composition, microstructure, oxidation resistance and microwave dielectric properties of the prepared samples were characterized by X-ray diffractometer, scanning electron microscope, energy dispersive spectroscopy and vector network analyzer, respectively. Results show that the prepared ceramic with Al doping has higher mass fraction of Ti3SiC2, and the as-prepared ceramic grains present a typical laminated appearance. Through the Al doping approach, the oxidation resistance of Ti3SiC2 ceramic at 1200℃ is significantly improved, and its real component ε' and imaginary component ε″ of permittivity are greatly increased, which are 60.8 and 6.28 in average in the frequency range of 8.2~12.4 GHz, respectively.

AB - Al-doped Ti3SiC2 ceramics were prepared by hot-pressing sintering, and the phase composition, microstructure, oxidation resistance and microwave dielectric properties of the prepared samples were characterized by X-ray diffractometer, scanning electron microscope, energy dispersive spectroscopy and vector network analyzer, respectively. Results show that the prepared ceramic with Al doping has higher mass fraction of Ti3SiC2, and the as-prepared ceramic grains present a typical laminated appearance. Through the Al doping approach, the oxidation resistance of Ti3SiC2 ceramic at 1200℃ is significantly improved, and its real component ε' and imaginary component ε″ of permittivity are greatly increased, which are 60.8 and 6.28 in average in the frequency range of 8.2~12.4 GHz, respectively.

KW - Al doping

KW - Hot-pressing sintering

KW - Microwave dielectric property

KW - Oxidation resistance

KW - TiSiC ceramic

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M3 - 文章

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JO - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

JF - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

IS - 2

ER -

Influence of Al Doping on the Preparation and Properties of Ti₃SiC₂ Ceramics

Abstract

Keywords

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