Indium oxide buffer layer for perovskite/Si 4-terminal tandem solar cells with efficiency exceeding 30%

Liming Du, Can Li, Yuhui Jiang, Fangfang Cao, Chunmei Jia, Zhi Wan, Rui Meng, Jishan Shi, Chuanxiao Xiao, Zhe Liu, Zhen Li

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Perovskite/Si tandem solar cells (TSCs) present great potential to surpass the Shockley-Queisser limit of single-junction solar cells for further advancing the power conversion efficiency (PCE) of solar cells. However, the fabrication of TSCs usually encounters challenge of selecting suitable sputtering buffer layer (SBL) to prevent the bombardment during the transparent electrode deposition. Herein, we introduce an indium oxide (In2O3) buffer layer via e-beam deposition to fabricate semi-transparent perovskite solar cells (ST-PSCs). The optical transmittance and electrical conductivity of In2O3 highly depend on the deposition rate. High deposition rate results in high ratio of metallic indium in the film, which causes severe parasitic absorption. A 20 nm-thick In2O3 film deposited at lower rate demonstrated high conductivity, transmittance and robust protection during sputtering. A 1.68 eV ST-PSC incorporating this In2O3 buffer layer exhibits a champion PCE of 20.20%, demonstrating the excellent optoelectronic and protective properties of In2O3. When combined with a Si subcell, the 4-terminal TSC obtains a remarkable PCE of 30.04%. Importantly, the unencapsulated ST-PSC maintained 80% of initial PCE after 423 h of continuous light soaking in N2. This work has provided a facile and instrumental transparent SBL strategy for perovskite/Si TSCs.

Original languageEnglish
Pages (from-to)189-196
Number of pages8
JournalJournal of Energy Chemistry
Volume102
DOIs
StatePublished - Mar 2025

Keywords

  • E-beam deposition
  • InO
  • Perovskite solar cells
  • Sputtering
  • Transparent electrode

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