Abstract
The hexangular plate-like zinc micro-crystal films were deposited on silicon (100) substrates through the vacuum evaporation method and the plate-like ZnO micro-crystal films were prepared on silicon substrates by hydrothermal process with N2H4·H2O solution. The results of XRD, SEM and EDS analyses indicate that the plate-like ZnO micro-crystals with zincblende structure have a length of about 1μm and a thickness of about 100nm, which grow almost vertically to the surface of silicon substrate and randomly assemble to form a continuous film. Taking account of the morphologies of oxidation product of zinc micro-crystal films on silicon substrates at ambient, the mechanism of zinc hydroxide dehydration is suggested to explain the formation process of the plate-like ZnO micro-crystal films on silicon substrates. The photoluminescence spectrum shows that the ZnO micro-crystal film is with a strong emission at near edge band-gap and weak emissions related to defects.
| Original language | English |
|---|---|
| Pages (from-to) | 2917-2920 |
| Number of pages | 4 |
| Journal | Gongneng Cailiao/Journal of Functional Materials |
| Volume | 43 |
| Issue number | 21 |
| State | Published - 15 Nov 2012 |
Keywords
- Growth mechanism
- Silicon substrate
- Zinc oxide
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