High-contrast top-emitting organic light-emitting diodes with a Ni/ZnS/CuPc/Ni contrast-enhancing stack and a ZnS anti-reflection layer

High-contrast top-emitting organic light-emitting diodes are successfully fabricated using a Ni/ZnS/copper-phthalocyanine (CuPc)/Ni contrast-enhancing stack (CES) and a ZnS anti-reflection (AR) layer. The CES and AR layer that are outside the active region reduce the complexity of the device design although their utilization affects the device electrical performance due to morphological deterioration of the device films. After the thickness optimization of the CES and AR coating, high contrast ratios of 139.4: 1 and 462.3: 1 are obtained under on-state luminances of 300 and 1000 cd m^-2 and an ambient luminance of 140 lux. The reduced reflectance of ambient illumination is mainly due to the anti-reflection ZnS layer and the strong absorption of ambient illumination by the Ni layers, where the CES structure is beneficial for the absorption of ambient illumination by the interfacial reflection of Ni/ZnS and CuPc/Ni.