Hg(3-3x)In2xTe3: A novel semiconductor material for near infrared photovoltaic detectors

Linghang Wang; Wanqi Jie

Hg_(3-3x)In_2xTe₃: A novel semiconductor material for near infrared photovoltaic detectors

Linghang Wang
, Wanqi Jie

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A new photoelectronic semiconductor crystal, mercury indium telluride (MIT), with dimensions of 15mm in diameter and 175mm in length has been successfully grown by using the vertical Bridgman method (VB) at the optimized growth conditions. The crystal was determined through the power X-ray diffraction to be defect zinc-blende structure with the space group F4̄3m. The transmittance spectra from 2.5 to 25μm shows high middle and far-infrared transmittance of 50-55%, which decreases gradually with the increase of wavenumber due to the lattice absorption and free carriers absorption. Hall measurements at room temperature show that the resistivity, carrier density and mobility of the MIT crystal are 4.79×10² Ωcm, 2.83×10¹³ cm^-3 and 4.60×10² cm ²V^-1s^-1, respectively. The reduction of carrier mobility and the increase of the resistivity are related to the adding of In₂Te₃ into HgTe, which changes the energy band structure of the crystal.

Original language	English
Title of host publication	Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007
Pages	133-136
Number of pages	4
State	Published - 2007
Event	2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007 - Beijing, China Duration: 3 Jun 2007 → 4 Jun 2007

Publication series

Name	Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007

Conference

Conference	2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007
Country/Territory	China
City	Beijing
Period	3/06/07 → 4/06/07

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Crystal growth
Infrared detectors
Mercury compounds
Photovoltaic detectors
Semiconductor materials

Cite this

@inproceedings{ece59f81a3b744d2b7b14362eb9bb941,

title = "Hg(3-3x)In2xTe3: A novel semiconductor material for near infrared photovoltaic detectors",

abstract = "A new photoelectronic semiconductor crystal, mercury indium telluride (MIT), with dimensions of 15mm in diameter and 175mm in length has been successfully grown by using the vertical Bridgman method (VB) at the optimized growth conditions. The crystal was determined through the power X-ray diffraction to be defect zinc-blende structure with the space group F{\=4}3m. The transmittance spectra from 2.5 to 25μm shows high middle and far-infrared transmittance of 50-55\%, which decreases gradually with the increase of wavenumber due to the lattice absorption and free carriers absorption. Hall measurements at room temperature show that the resistivity, carrier density and mobility of the MIT crystal are 4.79×102 Ωcm, 2.83×1013 cm-3 and 4.60×102 cm 2V-1s-1, respectively. The reduction of carrier mobility and the increase of the resistivity are related to the adding of In2Te3 into HgTe, which changes the energy band structure of the crystal.",

keywords = "Crystal growth, Infrared detectors, Mercury compounds, Photovoltaic detectors, Semiconductor materials",

author = "Linghang Wang and Wanqi Jie",

year = "2007",

language = "英语",

isbn = "1424410983",

series = "Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007",

pages = "133--136",

booktitle = "Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007",

note = "2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007 ; Conference date: 03-06-2007 Through 04-06-2007",

}

Wang, L & Jie, W 2007, Hg_(3-3x)In_2xTe₃: A novel semiconductor material for near infrared photovoltaic detectors. in Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007., 4289796, Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007, pp. 133-136, 2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007, Beijing, China, 3/06/07.

Hg_(3-3x)In_2xTe₃: A novel semiconductor material for near infrared photovoltaic detectors. / Wang, Linghang; Jie, Wanqi.
Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007. 2007. p. 133-136 4289796 (Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Hg(3-3x)In2xTe3

T2 - 2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007

AU - Wang, Linghang

AU - Jie, Wanqi

PY - 2007

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N2 - A new photoelectronic semiconductor crystal, mercury indium telluride (MIT), with dimensions of 15mm in diameter and 175mm in length has been successfully grown by using the vertical Bridgman method (VB) at the optimized growth conditions. The crystal was determined through the power X-ray diffraction to be defect zinc-blende structure with the space group F4̄3m. The transmittance spectra from 2.5 to 25μm shows high middle and far-infrared transmittance of 50-55%, which decreases gradually with the increase of wavenumber due to the lattice absorption and free carriers absorption. Hall measurements at room temperature show that the resistivity, carrier density and mobility of the MIT crystal are 4.79×102 Ωcm, 2.83×1013 cm-3 and 4.60×102 cm 2V-1s-1, respectively. The reduction of carrier mobility and the increase of the resistivity are related to the adding of In2Te3 into HgTe, which changes the energy band structure of the crystal.

AB - A new photoelectronic semiconductor crystal, mercury indium telluride (MIT), with dimensions of 15mm in diameter and 175mm in length has been successfully grown by using the vertical Bridgman method (VB) at the optimized growth conditions. The crystal was determined through the power X-ray diffraction to be defect zinc-blende structure with the space group F4̄3m. The transmittance spectra from 2.5 to 25μm shows high middle and far-infrared transmittance of 50-55%, which decreases gradually with the increase of wavenumber due to the lattice absorption and free carriers absorption. Hall measurements at room temperature show that the resistivity, carrier density and mobility of the MIT crystal are 4.79×102 Ωcm, 2.83×1013 cm-3 and 4.60×102 cm 2V-1s-1, respectively. The reduction of carrier mobility and the increase of the resistivity are related to the adding of In2Te3 into HgTe, which changes the energy band structure of the crystal.

KW - Crystal growth

KW - Infrared detectors

KW - Mercury compounds

KW - Photovoltaic detectors

KW - Semiconductor materials

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SN - 1424410983

SN - 9781424410989

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BT - Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007

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