Growth of large-size CdZnTe single crystal using seeded vertical Bridgman method

Ya Dong Xu; Wan Qi Jie; Tao Wang; Wei Hua Liu

Growth of large-size CdZnTe single crystal using seeded vertical Bridgman method

Ya Dong Xu, Wan Qi Jie, Tao Wang, Wei Hua Liu

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A 60 mm diameter CdZnTe (CZT) ingot with the single-crystal volume over 200 cm³ was successfully grown by using seeded modified vertical Bridgman (MVB) method. To analyze Zn distribution of the as-grown ingot, the near infrared (NIR) spectra of the slice was measured and the cutoff wavelength was calculated. The partition coefficient of Zn during the growth was calculated to be about 1.30. The infrared transmission was flat and high at 2000-4000 cm^-1 with the average value over 60%, while sharply decreased to zero from 2000 cm^-1 to 500 cm^-1. Through I-V curves of the Au/CZT wafers after passivation, the resistivity was calculated to be in the range of 1.8 × 10⁹-2.6 × 1010Ω · cm.

Original language	English
Pages (from-to)	1180-1184
Number of pages	5
Journal	Rengong Jingti Xuebao/Journal of Synthetic Crystals
Volume	35
Issue number	6
State	Published - Dec 2006

Keywords

CdZnTe
Near infrared spectrum
Seed
Vertical Bridgman method

Cite this

@article{82f6068096b7452faab5a51f6d046d64,

title = "Growth of large-size CdZnTe single crystal using seeded vertical Bridgman method",

abstract = "A 60 mm diameter CdZnTe (CZT) ingot with the single-crystal volume over 200 cm3 was successfully grown by using seeded modified vertical Bridgman (MVB) method. To analyze Zn distribution of the as-grown ingot, the near infrared (NIR) spectra of the slice was measured and the cutoff wavelength was calculated. The partition coefficient of Zn during the growth was calculated to be about 1.30. The infrared transmission was flat and high at 2000-4000 cm-1 with the average value over 60%, while sharply decreased to zero from 2000 cm-1 to 500 cm-1. Through I-V curves of the Au/CZT wafers after passivation, the resistivity was calculated to be in the range of 1.8 × 109-2.6 × 1010Ω · cm.",

keywords = "CdZnTe, Near infrared spectrum, Seed, Vertical Bridgman method",

author = "Xu, {Ya Dong} and Jie, {Wan Qi} and Tao Wang and Liu, {Wei Hua}",

year = "2006",

month = dec,

language = "英语",

volume = "35",

pages = "1180--1184",

journal = "Rengong Jingti Xuebao/Journal of Synthetic Crystals",

issn = "1000-985X",

publisher = "Chinese Ceramic Society",

number = "6",

}

TY - JOUR

T1 - Growth of large-size CdZnTe single crystal using seeded vertical Bridgman method

AU - Xu, Ya Dong

AU - Jie, Wan Qi

AU - Wang, Tao

AU - Liu, Wei Hua

PY - 2006/12

Y1 - 2006/12

N2 - A 60 mm diameter CdZnTe (CZT) ingot with the single-crystal volume over 200 cm3 was successfully grown by using seeded modified vertical Bridgman (MVB) method. To analyze Zn distribution of the as-grown ingot, the near infrared (NIR) spectra of the slice was measured and the cutoff wavelength was calculated. The partition coefficient of Zn during the growth was calculated to be about 1.30. The infrared transmission was flat and high at 2000-4000 cm-1 with the average value over 60%, while sharply decreased to zero from 2000 cm-1 to 500 cm-1. Through I-V curves of the Au/CZT wafers after passivation, the resistivity was calculated to be in the range of 1.8 × 109-2.6 × 1010Ω · cm.

AB - A 60 mm diameter CdZnTe (CZT) ingot with the single-crystal volume over 200 cm3 was successfully grown by using seeded modified vertical Bridgman (MVB) method. To analyze Zn distribution of the as-grown ingot, the near infrared (NIR) spectra of the slice was measured and the cutoff wavelength was calculated. The partition coefficient of Zn during the growth was calculated to be about 1.30. The infrared transmission was flat and high at 2000-4000 cm-1 with the average value over 60%, while sharply decreased to zero from 2000 cm-1 to 500 cm-1. Through I-V curves of the Au/CZT wafers after passivation, the resistivity was calculated to be in the range of 1.8 × 109-2.6 × 1010Ω · cm.

KW - CdZnTe

KW - Near infrared spectrum

KW - Seed

KW - Vertical Bridgman method

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M3 - 文章

AN - SCOPUS:33846534100

SN - 1000-985X

VL - 35

SP - 1180

EP - 1184

JO - Rengong Jingti Xuebao/Journal of Synthetic Crystals

JF - Rengong Jingti Xuebao/Journal of Synthetic Crystals

IS - 6

ER -

Growth of large-size CdZnTe single crystal using seeded vertical Bridgman method

Abstract

Keywords

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