Growth of high resistance Cd1-xZnxTe crystal and its property investigations

Guoqiang Li; Zhi Gu; Wanqi Jie

Growth of high resistance Cd_1-xZn_xTe crystal and its property investigations

Guoqiang Li
, Zhi Gu
, Wanqi Jie

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

Abstract

Vertical Bridgman method was used for the growth of X-ray and γ-ray detectors grade Cd_0.9Zn_0.1Te crystals by optimizing the growth parameters and the composition of the charge materials. The Cd_0.9Zn_0.1Te ingot grown by this method shows high crystallinity, high composition homogeneity, low impurity contamination, high IR transmittance, and high resistance, which are superior to those reported in the former publications. The correlations between the values of x and the concentrations of defects and impurities were analyzed.

Original language	English
Pages (from-to)	833-836
Number of pages	4
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	24
Issue number	8
State	Published - Aug 2003

Keywords

Bridgman method
CdZnTe
Crystallinity
Resistance
Transmittance

Cite this

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title = "Growth of high resistance Cd1-xZnxTe crystal and its property investigations",

abstract = "Vertical Bridgman method was used for the growth of X-ray and γ-ray detectors grade Cd0.9Zn0.1Te crystals by optimizing the growth parameters and the composition of the charge materials. The Cd0.9Zn0.1Te ingot grown by this method shows high crystallinity, high composition homogeneity, low impurity contamination, high IR transmittance, and high resistance, which are superior to those reported in the former publications. The correlations between the values of x and the concentrations of defects and impurities were analyzed.",

keywords = "Bridgman method, CdZnTe, Crystallinity, Resistance, Transmittance",

author = "Guoqiang Li and Zhi Gu and Wanqi Jie",

year = "2003",

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language = "英语",

volume = "24",

pages = "833--836",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

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TY - JOUR

T1 - Growth of high resistance Cd1-xZnxTe crystal and its property investigations

AU - Li, Guoqiang

AU - Gu, Zhi

AU - Jie, Wanqi

PY - 2003/8

Y1 - 2003/8

N2 - Vertical Bridgman method was used for the growth of X-ray and γ-ray detectors grade Cd0.9Zn0.1Te crystals by optimizing the growth parameters and the composition of the charge materials. The Cd0.9Zn0.1Te ingot grown by this method shows high crystallinity, high composition homogeneity, low impurity contamination, high IR transmittance, and high resistance, which are superior to those reported in the former publications. The correlations between the values of x and the concentrations of defects and impurities were analyzed.

AB - Vertical Bridgman method was used for the growth of X-ray and γ-ray detectors grade Cd0.9Zn0.1Te crystals by optimizing the growth parameters and the composition of the charge materials. The Cd0.9Zn0.1Te ingot grown by this method shows high crystallinity, high composition homogeneity, low impurity contamination, high IR transmittance, and high resistance, which are superior to those reported in the former publications. The correlations between the values of x and the concentrations of defects and impurities were analyzed.

KW - Bridgman method

KW - CdZnTe

KW - Crystallinity

KW - Resistance

KW - Transmittance

UR - https://www.scopus.com/pages/publications/0842290786

M3 - 文章

AN - SCOPUS:0842290786

SN - 0253-4177

VL - 24

SP - 833

EP - 836

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 8

ER -

Growth of high resistance Cd_1-xZn_xTe crystal and its property investigations

Abstract

Keywords

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