Growth of Cd1-xZnxTe crystals with different x values and their qualities comparison

Guoqiang Li; Wanqi Jie; Zhi Gu; Hui Hua

doi:10.1016/j.jcrysgro.2003.11.069

Growth of Cd_1-xZn_xTe crystals with different x values and their qualities comparison

Guoqiang Li
, Wanqi Jie
, Zhi Gu
, Hui Hua

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Three Cd_1-xZn_xTe ingots with x values of 0.10, 0.15, and 0.20 were, respectively, grown by vertical Bridgman method (VBM). Characterization indicated that Cd_0.85Zn_0.15Te possessed preferable qualities. It had low radial Zn concentration deviation, low densities of dislocation and Te precipitate/inclusion, and high infrared transmission. What is more, Cd_0.85Zn_0.15Te obtained the highest resistivity, which was about one order higher than both Cd _0.9Zn_0.1Te and Cd_0.8Zn_0.2Te. From the point of the defects and impurities existing in the crystals, as well as the characteristics of the crystal growth by VBM, the opportunity for growth of high-qualities Cd_1-xZn_xTe was given in this paper.

Original language	English
Pages (from-to)	332-337
Number of pages	6
Journal	Journal of Crystal Growth
Volume	263
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2003.11.069
State	Published - 1 Mar 2004

Keywords

A1. Characterization
A1. Segregation
A2. Bridgman technique
B2. Semiconducting II-VI materials

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10.1016/j.jcrysgro.2003.11.069

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title = "Growth of Cd1-xZnxTe crystals with different x values and their qualities comparison",

abstract = "Three Cd1-xZnxTe ingots with x values of 0.10, 0.15, and 0.20 were, respectively, grown by vertical Bridgman method (VBM). Characterization indicated that Cd0.85Zn0.15Te possessed preferable qualities. It had low radial Zn concentration deviation, low densities of dislocation and Te precipitate/inclusion, and high infrared transmission. What is more, Cd0.85Zn0.15Te obtained the highest resistivity, which was about one order higher than both Cd 0.9Zn0.1Te and Cd0.8Zn0.2Te. From the point of the defects and impurities existing in the crystals, as well as the characteristics of the crystal growth by VBM, the opportunity for growth of high-qualities Cd1-xZnxTe was given in this paper.",

keywords = "A1. Characterization, A1. Segregation, A2. Bridgman technique, B2. Semiconducting II-VI materials",

author = "Guoqiang Li and Wanqi Jie and Zhi Gu and Hui Hua",

year = "2004",

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doi = "10.1016/j.jcrysgro.2003.11.069",

language = "英语",

volume = "263",

pages = "332--337",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Growth of Cd1-xZnxTe crystals with different x values and their qualities comparison

AU - Li, Guoqiang

AU - Jie, Wanqi

AU - Gu, Zhi

AU - Hua, Hui

PY - 2004/3/1

Y1 - 2004/3/1

N2 - Three Cd1-xZnxTe ingots with x values of 0.10, 0.15, and 0.20 were, respectively, grown by vertical Bridgman method (VBM). Characterization indicated that Cd0.85Zn0.15Te possessed preferable qualities. It had low radial Zn concentration deviation, low densities of dislocation and Te precipitate/inclusion, and high infrared transmission. What is more, Cd0.85Zn0.15Te obtained the highest resistivity, which was about one order higher than both Cd 0.9Zn0.1Te and Cd0.8Zn0.2Te. From the point of the defects and impurities existing in the crystals, as well as the characteristics of the crystal growth by VBM, the opportunity for growth of high-qualities Cd1-xZnxTe was given in this paper.

AB - Three Cd1-xZnxTe ingots with x values of 0.10, 0.15, and 0.20 were, respectively, grown by vertical Bridgman method (VBM). Characterization indicated that Cd0.85Zn0.15Te possessed preferable qualities. It had low radial Zn concentration deviation, low densities of dislocation and Te precipitate/inclusion, and high infrared transmission. What is more, Cd0.85Zn0.15Te obtained the highest resistivity, which was about one order higher than both Cd 0.9Zn0.1Te and Cd0.8Zn0.2Te. From the point of the defects and impurities existing in the crystals, as well as the characteristics of the crystal growth by VBM, the opportunity for growth of high-qualities Cd1-xZnxTe was given in this paper.

KW - A1. Characterization

KW - A1. Segregation

KW - A2. Bridgman technique

KW - B2. Semiconducting II-VI materials

UR - https://www.scopus.com/pages/publications/1342304973

U2 - 10.1016/j.jcrysgro.2003.11.069

DO - 10.1016/j.jcrysgro.2003.11.069

M3 - 文章

AN - SCOPUS:1342304973

SN - 0022-0248

VL - 263

SP - 332

EP - 337

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Growth of Cd_1-xZn_xTe crystals with different x values and their qualities comparison

Abstract

Keywords

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