Growth and photoluminescence properties of CdS solid solution semiconductor

Photoluminescence (PL) emitted from Cd_1-xZn_xS and CdS_1-ySe_y solid solution semiconductor was significantly stronger than PL from the pure CdS and CdSe semiconductor. The samples were prepared using an improved Se-S-Na₂S flux route. Photoluminescence in Cd_1-xZn_xS crystal was brightly yellow at room temperature under UV radiation. The phase and composition of the solid solution was measured by the XRD and was confirmed by UV-NIS spectrum as x of 0.3 and y of 0.2. The enhanced photoluminescence was presumably due to the introduction of extra defect (vacancies) by solid solution action and consequently the increasing of luminescence center concentration.