Growth and electrical properties of mercury indium telluride crystals

Hg_3-3xIn_2xTe₃(MIT)(x=0.5) single crystals were successfully grown using the vertical Bridgman method (VB) and were investigated by XRD, RO-XRD, and Hall measurements. The results show that the as-grown crystal is high quality single-phase crystal. The wafer surface is (311) face, and the crystal face is located at θ=23.86°. The spatial deviation angle of the (311) face is φ=2.9°, and the degree of orientation scatter is FWHM=0.3°. The crystal is an n-type semiconductor. The resistivity, carrier concentration, and carrier mobility are 4.79 × 10²Ω·cm, 2.83 × 10¹³ cm^-3, and 4.6 × 10² cm²/(V·s), respectively. The Fermi level lies near the midgap and is about 8 meV higher. The, calculated values of the carrier concentration are in agreement with the experimental ones.