Growth and Characterization of Detector-Grade Cd0.9Zn0.1Te Crystals by the Traveling Heater Method with the Accelerated Crucible Rotation Technique

Boru Zhou; Wanqi Jie; Tao Wang; Yadong Xu; Fan Yang; Liying Yin; Binbin Zhang; Ruihua Nan

doi:10.1007/s11664-017-5853-6

Growth and Characterization of Detector-Grade Cd_0.9Zn_0.1Te Crystals by the Traveling Heater Method with the Accelerated Crucible Rotation Technique

Boru Zhou, Wanqi Jie, Tao Wang, Yadong Xu, Fan Yang, Liying Yin, Binbin Zhang, Ruihua Nan

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The accelerated crucible rotation technique has been applied in the traveling heater method process for the growth of CdZnTe:In (CZT:In) ingots. Full single crystalline wafers with a diameter of 53 mm were obtained under optimized growth conditions. The crystalline quality and the photoelectric properties of the CZT crystals were characterized using infrared transmission microscopy, infrared transmittance spectra, current–voltage (I–V) analysis and gamma ray radiation response measurements. The CZT crystals show no Te inclusions over 3 μm in size and those smaller than 3 μm have a density of 10⁵ cm⁻³. The resistivity of the crystals reaches 3.92 × 10¹⁰ Ω/cm⁻¹ by fitting the I–V curve. The mobility–lifetime (μτ) product of the electrons is 4.12 × 10⁻³ cm²/V. Based on the CZT crystals, planar configuration and quasi-hemispherical configuration detectors were fabricated and show a resolution of 3.67% at ²⁴¹Am@59.5 keV and 1.95% at ¹³⁷Cs@662 keV, respectively, which indicates a superior detection performance.

Original language	English
Pages (from-to)	1125-1130
Number of pages	6
Journal	Journal of Electronic Materials
Volume	47
Issue number	2
DOIs	https://doi.org/10.1007/s11664-017-5853-6
State	Published - 1 Feb 2018

Keywords

ACRT
CdZnTe
single crystal growth
Te inclusions
THM

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10.1007/s11664-017-5853-6

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title = "Growth and Characterization of Detector-Grade Cd0.9Zn0.1Te Crystals by the Traveling Heater Method with the Accelerated Crucible Rotation Technique",

abstract = "The accelerated crucible rotation technique has been applied in the traveling heater method process for the growth of CdZnTe:In (CZT:In) ingots. Full single crystalline wafers with a diameter of 53 mm were obtained under optimized growth conditions. The crystalline quality and the photoelectric properties of the CZT crystals were characterized using infrared transmission microscopy, infrared transmittance spectra, current–voltage (I–V) analysis and gamma ray radiation response measurements. The CZT crystals show no Te inclusions over 3 μm in size and those smaller than 3 μm have a density of 105 cm−3. The resistivity of the crystals reaches 3.92 × 1010 Ω/cm−1 by fitting the I–V curve. The mobility–lifetime (μτ) product of the electrons is 4.12 × 10−3 cm2/V. Based on the CZT crystals, planar configuration and quasi-hemispherical configuration detectors were fabricated and show a resolution of 3.67% at 241Am@59.5 keV and 1.95% at 137Cs@662 keV, respectively, which indicates a superior detection performance.",

keywords = "ACRT, CdZnTe, single crystal growth, Te inclusions, THM",

author = "Boru Zhou and Wanqi Jie and Tao Wang and Yadong Xu and Fan Yang and Liying Yin and Binbin Zhang and Ruihua Nan",

note = "Publisher Copyright: {\textcopyright} 2017, The Minerals, Metals & Materials Society.",

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T1 - Growth and Characterization of Detector-Grade Cd0.9Zn0.1Te Crystals by the Traveling Heater Method with the Accelerated Crucible Rotation Technique

AU - Zhou, Boru

AU - Jie, Wanqi

AU - Wang, Tao

AU - Xu, Yadong

AU - Yang, Fan

AU - Yin, Liying

AU - Zhang, Binbin

AU - Nan, Ruihua

PY - 2018/2/1

Y1 - 2018/2/1

N2 - The accelerated crucible rotation technique has been applied in the traveling heater method process for the growth of CdZnTe:In (CZT:In) ingots. Full single crystalline wafers with a diameter of 53 mm were obtained under optimized growth conditions. The crystalline quality and the photoelectric properties of the CZT crystals were characterized using infrared transmission microscopy, infrared transmittance spectra, current–voltage (I–V) analysis and gamma ray radiation response measurements. The CZT crystals show no Te inclusions over 3 μm in size and those smaller than 3 μm have a density of 105 cm−3. The resistivity of the crystals reaches 3.92 × 1010 Ω/cm−1 by fitting the I–V curve. The mobility–lifetime (μτ) product of the electrons is 4.12 × 10−3 cm2/V. Based on the CZT crystals, planar configuration and quasi-hemispherical configuration detectors were fabricated and show a resolution of 3.67% at 241Am@59.5 keV and 1.95% at 137Cs@662 keV, respectively, which indicates a superior detection performance.

AB - The accelerated crucible rotation technique has been applied in the traveling heater method process for the growth of CdZnTe:In (CZT:In) ingots. Full single crystalline wafers with a diameter of 53 mm were obtained under optimized growth conditions. The crystalline quality and the photoelectric properties of the CZT crystals were characterized using infrared transmission microscopy, infrared transmittance spectra, current–voltage (I–V) analysis and gamma ray radiation response measurements. The CZT crystals show no Te inclusions over 3 μm in size and those smaller than 3 μm have a density of 105 cm−3. The resistivity of the crystals reaches 3.92 × 1010 Ω/cm−1 by fitting the I–V curve. The mobility–lifetime (μτ) product of the electrons is 4.12 × 10−3 cm2/V. Based on the CZT crystals, planar configuration and quasi-hemispherical configuration detectors were fabricated and show a resolution of 3.67% at 241Am@59.5 keV and 1.95% at 137Cs@662 keV, respectively, which indicates a superior detection performance.

KW - ACRT

KW - CdZnTe

KW - single crystal growth

KW - Te inclusions

KW - THM

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Growth and Characterization of Detector-Grade Cd_0.9Zn_0.1Te Crystals by the Traveling Heater Method with the Accelerated Crucible Rotation Technique

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