Abstract
For optoelectronic materials, the ability to detect light in a broad wavelength range is critical for practical applications and commercialization. According to previous studies of photodetectors based on monolayer MoS2, manipulation of photogenerated carriers and broadband photodetection are exceedingly difficult. Herein, a rapid and mild gold-autocatalyzed synthesis method is developed to fabricate multi-element clusters (MECs) on monolayer MoS2 at room temperature to obtain a composite with radically modified properties. MECs can modulate the photogenerated carrier behavior and the electronic structure of MoS2. Therefore, MECs/MoS2 exhibit a broadband photodetection range from 532 to 1550 nm (visible light-near infrared), which is far beyond the bandgap limit of monolayer MoS2 (1.8 eV, cut-off wavelength of about 690 nm), as well as rapid response/recovery processes (41.0/134.4 ms) and a reduced dark current. The strategy overcomes the high-temperature requirment to mix multiple elements and offers new opportunities for monolayer MoS2 to become a promising material for next-generation broadband optoelectronic devices.
| Original language | English |
|---|---|
| Article number | e01208 |
| Journal | Advanced Optical Materials |
| Volume | 13 |
| Issue number | 26 |
| DOIs | |
| State | Published - 12 Sep 2025 |
Keywords
- interface
- monolayer MoS
- multi-element cluster
- photoresponse
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