Genetic algorithm designed multilayered Si3N4 nanowire membranes hybridized by dielectric wide-range tunable CVD graphene skin for broadband microwave absorption

Jie Liang, Fang Ye, Qiang Song, Yuchen Cao, Caixiang Xiao, Yiming Qin, Yunzhou Lin, Bo Huang, Xiaoshuang Wang, Chen Li

Research output: Contribution to journalArticlepeer-review

Abstract

Nowadays, the dispersion characteristics limit the broadband performance of single-layer homogeneous absorbing materials. A multilayer impedance matching structure (MIMS) is capable of optimizing the impedance matching characteristics of the broadband electromagnetic wave (EMW), thereby broadening the effective absorption band (EAB). Consequently, the availability of a database with differentiated characteristics is a crucial prerequisite for the realization of MIMS design. Herein, graphene (Gr)-skinned Si3N4 nanowires were prepared via a chemical vapor deposition (CVD) process. Moreover, the formation of a strong interfacial polarization between Si3N4 and Gr can optimize the samples within the database. Furthermore, a wide-range of defect content (0.80–2.35 of ID/IG) and dielectric loss (0.03–1.5 of tanδ) modulation was achieved through the manipulation of the CVD deposition process. A two-layer structure with a thickness of only 5 mm was rapidly designed based on a wide-range modulation and genetic algorithm. This structure exhibited an EAB of up to 12.48 GHz according to measurement of arc method, which is a significant widening of 5.6 GHz compared to the EAB of the single-layer structure. The proposed integrated design of wide-range modulation of dielectric properties and intelligent optimization algorithm of macrostructure is expected to further broaden the EAB of dielectric absorbing materials and become a new design paradigm.

Original languageEnglish
Article number112298
JournalComposites Part B: Engineering
Volume297
DOIs
StatePublished - 15 May 2025

Keywords

  • Electromagnetic wave absorption
  • Genetic algorithm
  • Graphene
  • Interfacial polarization
  • Multilayer impedance matching structure

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