Field emission from hydrothermally grown ZnO nanoinjectors

Ang Wei; Chunxiang Xu; X. W. Sun; Wei Huang; Guo Qiang Lo

doi:10.1109/JDT.2007.901569

Field emission from hydrothermally grown ZnO nanoinjectors

Ang Wei
, Chunxiang Xu
, X. W. Sun
, Wei Huang
, Guo Qiang Lo

Nanjing University of Posts and Telecommunications
Southeast University, Nanjing
IEEE
Nanyang Technological University
Agency for Science, Technology and Research, Singapore

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

An injector-like nanostructure of ZnO fabricated by hydrothermal method was tested for field emission (FE) properties. The turn-on field of 3.8 V / μm was obtained at a current density of 0.1 μA/cm². Above the turn-on field, the emission current density quickly raised up to 1 mA/cm² at about 12.8 V/μm. The field enhancement factor β was estimated to be 2556 and 1226 in the low and high field regions, respectively. The two-slope FE behavior was attributed to the adsorbates and defects which were introduced in the fabrication process in aqueous solution at low temperature. The good FE properties of the ZnO nanoinjectors indicate that they are applicable as low-cost and low-temperature cathode materials for FE-based devices.

Original language	English
Article number	4356485
Pages (from-to)	9-12
Number of pages	4
Journal	IEEE/OSA Journal of Display Technology
Volume	4
Issue number	1
DOIs	https://doi.org/10.1109/JDT.2007.901569
State	Published - Mar 2008
Externally published	Yes

Keywords

Display panel
Field emission (FE)
Hydrothermal method
ZnO

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10.1109/JDT.2007.901569

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title = "Field emission from hydrothermally grown ZnO nanoinjectors",

abstract = "An injector-like nanostructure of ZnO fabricated by hydrothermal method was tested for field emission (FE) properties. The turn-on field of 3.8 V / μm was obtained at a current density of 0.1 μA/cm2. Above the turn-on field, the emission current density quickly raised up to 1 mA/cm2 at about 12.8 V/μm. The field enhancement factor β was estimated to be 2556 and 1226 in the low and high field regions, respectively. The two-slope FE behavior was attributed to the adsorbates and defects which were introduced in the fabrication process in aqueous solution at low temperature. The good FE properties of the ZnO nanoinjectors indicate that they are applicable as low-cost and low-temperature cathode materials for FE-based devices.",

keywords = "Display panel, Field emission (FE), Hydrothermal method, ZnO",

author = "Ang Wei and Chunxiang Xu and Sun, \{X. W.\} and Wei Huang and Lo, \{Guo Qiang\}",

year = "2008",

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doi = "10.1109/JDT.2007.901569",

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TY - JOUR

T1 - Field emission from hydrothermally grown ZnO nanoinjectors

AU - Wei, Ang

AU - Xu, Chunxiang

AU - Sun, X. W.

AU - Huang, Wei

AU - Lo, Guo Qiang

PY - 2008/3

Y1 - 2008/3

N2 - An injector-like nanostructure of ZnO fabricated by hydrothermal method was tested for field emission (FE) properties. The turn-on field of 3.8 V / μm was obtained at a current density of 0.1 μA/cm2. Above the turn-on field, the emission current density quickly raised up to 1 mA/cm2 at about 12.8 V/μm. The field enhancement factor β was estimated to be 2556 and 1226 in the low and high field regions, respectively. The two-slope FE behavior was attributed to the adsorbates and defects which were introduced in the fabrication process in aqueous solution at low temperature. The good FE properties of the ZnO nanoinjectors indicate that they are applicable as low-cost and low-temperature cathode materials for FE-based devices.

AB - An injector-like nanostructure of ZnO fabricated by hydrothermal method was tested for field emission (FE) properties. The turn-on field of 3.8 V / μm was obtained at a current density of 0.1 μA/cm2. Above the turn-on field, the emission current density quickly raised up to 1 mA/cm2 at about 12.8 V/μm. The field enhancement factor β was estimated to be 2556 and 1226 in the low and high field regions, respectively. The two-slope FE behavior was attributed to the adsorbates and defects which were introduced in the fabrication process in aqueous solution at low temperature. The good FE properties of the ZnO nanoinjectors indicate that they are applicable as low-cost and low-temperature cathode materials for FE-based devices.

KW - Display panel

KW - Field emission (FE)

KW - Hydrothermal method

KW - ZnO

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DO - 10.1109/JDT.2007.901569

M3 - 文章

AN - SCOPUS:43649101695

SN - 1551-319X

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EP - 12

JO - IEEE/OSA Journal of Display Technology

JF - IEEE/OSA Journal of Display Technology

IS - 1

M1 - 4356485

ER -

Field emission from hydrothermally grown ZnO nanoinjectors

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Keywords

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