Faraday rotation in indium doped Cd1 - x Mnx Te single crystals

Lijun Luan; Wanqi Jie; Jijun Zhang; Peisen Li

doi:10.1016/j.ssc.2008.12.022

Faraday rotation in indium doped Cd_{1 - x} Mn_x Te single crystals

Lijun Luan
, Wanqi Jie
, Jijun Zhang
, Peisen Li

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Faraday rotation in indium (In) doped Cd_1-xMn_xTe (CMT) single crystals is studied for the first time at room temperature. We extend a multioscillator model for the Faraday rotation of In doped CMT (CMT: In) by using an analytical expression for the refractive index that includes the contributions from interband transitions at the Γ, L and X points of the Brillouin zone as well as the contribution from transition caused by doping. Based on the band gap at the Γ-point in the Brillouin zone (E₀) and E_DA gap caused by doping, a simple energy level distribution model is put forward. Finally, the results of the PL spectra verify the existence of the E_DA.

Original language	English
Pages (from-to)	357-360
Number of pages	4
Journal	Solid State Communications
Volume	149
Issue number	9-10
DOIs	https://doi.org/10.1016/j.ssc.2008.12.022
State	Published - Mar 2009

Keywords

A. Semimagnetic semiconductors
D. Exchange interaction
D. Extended multioscillator model
D. Faraday rotation

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10.1016/j.ssc.2008.12.022

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title = "Faraday rotation in indium doped Cd1 - x Mnx Te single crystals",

abstract = "Faraday rotation in indium (In) doped Cd1-xMnxTe (CMT) single crystals is studied for the first time at room temperature. We extend a multioscillator model for the Faraday rotation of In doped CMT (CMT: In) by using an analytical expression for the refractive index that includes the contributions from interband transitions at the Γ, L and X points of the Brillouin zone as well as the contribution from transition caused by doping. Based on the band gap at the Γ-point in the Brillouin zone (E0) and EDA gap caused by doping, a simple energy level distribution model is put forward. Finally, the results of the PL spectra verify the existence of the EDA.",

keywords = "A. Semimagnetic semiconductors, D. Exchange interaction, D. Extended multioscillator model, D. Faraday rotation",

author = "Lijun Luan and Wanqi Jie and Jijun Zhang and Peisen Li",

year = "2009",

month = mar,

doi = "10.1016/j.ssc.2008.12.022",

language = "英语",

volume = "149",

pages = "357--360",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Faraday rotation in indium doped Cd1 - x Mnx Te single crystals

AU - Luan, Lijun

AU - Jie, Wanqi

AU - Zhang, Jijun

AU - Li, Peisen

PY - 2009/3

Y1 - 2009/3

N2 - Faraday rotation in indium (In) doped Cd1-xMnxTe (CMT) single crystals is studied for the first time at room temperature. We extend a multioscillator model for the Faraday rotation of In doped CMT (CMT: In) by using an analytical expression for the refractive index that includes the contributions from interband transitions at the Γ, L and X points of the Brillouin zone as well as the contribution from transition caused by doping. Based on the band gap at the Γ-point in the Brillouin zone (E0) and EDA gap caused by doping, a simple energy level distribution model is put forward. Finally, the results of the PL spectra verify the existence of the EDA.

AB - Faraday rotation in indium (In) doped Cd1-xMnxTe (CMT) single crystals is studied for the first time at room temperature. We extend a multioscillator model for the Faraday rotation of In doped CMT (CMT: In) by using an analytical expression for the refractive index that includes the contributions from interband transitions at the Γ, L and X points of the Brillouin zone as well as the contribution from transition caused by doping. Based on the band gap at the Γ-point in the Brillouin zone (E0) and EDA gap caused by doping, a simple energy level distribution model is put forward. Finally, the results of the PL spectra verify the existence of the EDA.

KW - A. Semimagnetic semiconductors

KW - D. Exchange interaction

KW - D. Extended multioscillator model

KW - D. Faraday rotation

UR - https://www.scopus.com/pages/publications/58249116905

U2 - 10.1016/j.ssc.2008.12.022

DO - 10.1016/j.ssc.2008.12.022

M3 - 文章

AN - SCOPUS:58249116905

SN - 0038-1098

VL - 149

SP - 357

EP - 360

JO - Solid State Communications

JF - Solid State Communications

IS - 9-10

ER -

Faraday rotation in indium doped Cd_{1 - x} Mn_x Te single crystals

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Keywords

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