Enhancing Capacitance of Nickel Cobalt Chalcogenide via Interface Structural Design

  • Fei Lu
  • , Min Zhou
  • , Kun Su
  • , Tao Ye
  • , Yijun Yang
  • , Tran Dai Lam
  • , Yoshio Bando
  • , Xi Wang

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Spinel NiCo 2 X 4 (X = O or S), comprising two geometrical cobalt ions, Co 2+ in the tetrahedral site (Co 2+ Td ) and Co 3+ in the octahedral site (Co 3+ Oh ), has been widely evaluated as a promising pseudocapacitor electrode material. Previous literature mainly demonstrated that much higher specific capacitance of NiCo 2 S 4 than that of NiCo 2 O 4 was ascribed to the higher electronic conductivity. However, we argue that only a small amount of capacitance can be induced by the electronic conductivity, while the significance of electrochemical active species in these system has long been ignored. Here, we propose that geometrical-site-dependent pseudocapacitive activity will generate enhanced specific capacitance through the interface structural design. It reveals that specific capacitance of NiCo 2 S 4 (1862 F g -1 at 4 A g -1 ) is 50% higher than that of NiCo 2 O 4 (1230 F g -1 at 4 A g -1 ), which is derived from the designed increase of Co 2+ Td ions (cobalt ions in the tetrahedral site) in NiCo 2 S 4 . These results have significant implications for the design and optimization of the electrochemical properties of transition-metal-based pseudocapacitors.

Original languageEnglish
Pages (from-to)2082-2092
Number of pages11
JournalACS Applied Materials and Interfaces
Volume11
Issue number2
DOIs
StatePublished - 16 Jan 2019
Externally publishedYes

Keywords

  • all-solid-state asymmetric supercapacitor
  • geometrical-site dependence
  • interface structural design
  • nickel cobalt chalcogenide
  • pseudocapacitance

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