Enhanced dielectric temperature stability and energy-storage properties of (Y_0.5Nb_0.5)⁴⁺ co-doped (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ lead-free relaxor ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06Ti_1−x(Y_0.5Nb_0.5)_xO₃ (abbreviated as BNTBT-100xYN) lead-free relaxor ceramics were designed and prepared using a traditional solid-state sintering technique. The influences of the introduction of (Y_0.5Nb_0.5)⁴⁺ complex ions for the dielectric properties and energy storage performances of BNTBT-100xYN ceramics were systematically studied. All samples exhibited a typical pseudo-cubic symmetry structure and obtained the dense microstructure with the uniform distribution of all elements. The ergodic relaxor behavior of all ceramics was observed and revealed a trend of increase as a function of composition. It accelerated the improvement of the temperature stability of the dielectric constant. All samples showed a single grain conduction mechanism and the activation energy decreased with the addition of composition. It is related to the generation of oxygen vacancies induced by the defect dipoles. BNTBT-6YN ceramic revealed excellent dielectric temperature stability within the temperature range from 87 to 479 °C and the loss tangent less than 0.05 between 25 °C and 474 °C. Besides, a high recoverable energy density of ~ 0.91 J/cm³ with the corresponding efficiency of ~ 78.5% at applied 115 kV/cm field was achieved for BNTBT-5YN ceramic. Hence, BNTBT-5YN and BNTBT-6YN ceramics will become one of the outstanding dielectric ceramics for the electronic components.