Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes

Mingdong Yi; Litao Zhao; Quli Fan; Xianhai Xia; Wei Ai; Linghai Xie; Xiangmei Liu; Naien Shi; Wenjun Wang; Yanping Wang; Wei Huang

doi:10.1063/1.3639287

Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes

Mingdong Yi
, Litao Zhao
, Quli Fan
, Xianhai Xia
, Wei Ai
, Linghai Xie
, Xiangmei Liu
, Naien Shi
, Wenjun Wang
, Yanping Wang
, Wei Huang

Nanjing University of Posts and Telecommunications
Liaocheng University
University of Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

We demonstrated write-once-read-many-times (WORM) memory devices based on graphene oxide (GO) film sandwiched between ITO and LiF/Al electrode. The devices showed irreversible electrical transition from the low conductivity (OFF) state to the high conductivity (ON) state and the ON/OFF current ratio between the conductivities of two states was over 5.7 × 10⁴. The results of I-V data, AFM and SEM images indicated that the WORM memory characteristics of GO diodes were mainly attributed to charge trapping at GO layers and interfacial properties between GO and LiF/Al electrode.

Original language	English
Article number	063709
Journal	Journal of Applied Physics
Volume	110
Issue number	6
DOIs	https://doi.org/10.1063/1.3639287
State	Published - 15 Sep 2011
Externally published	Yes

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title = "Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes",

abstract = "We demonstrated write-once-read-many-times (WORM) memory devices based on graphene oxide (GO) film sandwiched between ITO and LiF/Al electrode. The devices showed irreversible electrical transition from the low conductivity (OFF) state to the high conductivity (ON) state and the ON/OFF current ratio between the conductivities of two states was over 5.7 {\texttimes} 104. The results of I-V data, AFM and SEM images indicated that the WORM memory characteristics of GO diodes were mainly attributed to charge trapping at GO layers and interfacial properties between GO and LiF/Al electrode.",

author = "Mingdong Yi and Litao Zhao and Quli Fan and Xianhai Xia and Wei Ai and Linghai Xie and Xiangmei Liu and Naien Shi and Wenjun Wang and Yanping Wang and Wei Huang",

year = "2011",

month = sep,

day = "15",

doi = "10.1063/1.3639287",

language = "英语",

volume = "110",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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TY - JOUR

T1 - Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes

AU - Yi, Mingdong

AU - Zhao, Litao

AU - Fan, Quli

AU - Xia, Xianhai

AU - Ai, Wei

AU - Xie, Linghai

AU - Liu, Xiangmei

AU - Shi, Naien

AU - Wang, Wenjun

AU - Wang, Yanping

AU - Huang, Wei

PY - 2011/9/15

Y1 - 2011/9/15

N2 - We demonstrated write-once-read-many-times (WORM) memory devices based on graphene oxide (GO) film sandwiched between ITO and LiF/Al electrode. The devices showed irreversible electrical transition from the low conductivity (OFF) state to the high conductivity (ON) state and the ON/OFF current ratio between the conductivities of two states was over 5.7 × 104. The results of I-V data, AFM and SEM images indicated that the WORM memory characteristics of GO diodes were mainly attributed to charge trapping at GO layers and interfacial properties between GO and LiF/Al electrode.

AB - We demonstrated write-once-read-many-times (WORM) memory devices based on graphene oxide (GO) film sandwiched between ITO and LiF/Al electrode. The devices showed irreversible electrical transition from the low conductivity (OFF) state to the high conductivity (ON) state and the ON/OFF current ratio between the conductivities of two states was over 5.7 × 104. The results of I-V data, AFM and SEM images indicated that the WORM memory characteristics of GO diodes were mainly attributed to charge trapping at GO layers and interfacial properties between GO and LiF/Al electrode.

UR - https://www.scopus.com/pages/publications/80053523031

U2 - 10.1063/1.3639287

DO - 10.1063/1.3639287

M3 - 文章

AN - SCOPUS:80053523031

SN - 0021-8979

VL - 110

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 063709

ER -

Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes

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