Efficiency Enhancement of Class-J Power Amplifiers by Injecting Second Harmonic Into the Gate and Drain Node Simultaneously

Chang Liu; Qi Sun; Han Dong Wu; Hao Zhang; Fadhel M. Ghannouchi

doi:10.1109/LMWT.2024.3467345

Efficiency Enhancement of Class-J Power Amplifiers by Injecting Second Harmonic Into the Gate and Drain Node Simultaneously

Chang Liu, Qi Sun, Han Dong Wu, Hao Zhang, Fadhel M. Ghannouchi

School of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this letter, a design methodology is proposed to improve the efficiency of class-J power amplifiers (PAs). By injecting the second harmonic into the gate and drain node simultaneously, both the intrinsic drain voltage and current waveforms of the ideal class-J PA are reshaped, leading to a smaller phase shift, and consequently, higher efficiency has been obtained. In addition, the detailed design guideline of the proposed structure is provided. Based on it, a proof-of-concept circuit with a commercial GaN transistor is designed. The measured result shows the power-added efficiency (PAE) of 78.6% and gain of 14.3 dB at 1.69 GHz. To the best of our knowledge, this is the highest PAE of class-J PAs at L-band.

Original language	English
Pages (from-to)	1347-1350
Number of pages	4
Journal	IEEE Microwave and Wireless Technology Letters
Volume	34
Issue number	12
DOIs	https://doi.org/10.1109/LMWT.2024.3467345
State	Published - 2024

Keywords

Class-J
harmonic injection (HI) at the gate and drain node
high efficiency
power amplifiers (PAs)
waveform reshaping

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10.1109/LMWT.2024.3467345

Cite this

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title = "Efficiency Enhancement of Class-J Power Amplifiers by Injecting Second Harmonic Into the Gate and Drain Node Simultaneously",

abstract = "In this letter, a design methodology is proposed to improve the efficiency of class-J power amplifiers (PAs). By injecting the second harmonic into the gate and drain node simultaneously, both the intrinsic drain voltage and current waveforms of the ideal class-J PA are reshaped, leading to a smaller phase shift, and consequently, higher efficiency has been obtained. In addition, the detailed design guideline of the proposed structure is provided. Based on it, a proof-of-concept circuit with a commercial GaN transistor is designed. The measured result shows the power-added efficiency (PAE) of 78.6\% and gain of 14.3 dB at 1.69 GHz. To the best of our knowledge, this is the highest PAE of class-J PAs at L-band.",

keywords = "Class-J, harmonic injection (HI) at the gate and drain node, high efficiency, power amplifiers (PAs), waveform reshaping",

author = "Chang Liu and Qi Sun and Wu, \{Han Dong\} and Hao Zhang and Ghannouchi, \{Fadhel M.\}",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE.",

year = "2024",

doi = "10.1109/LMWT.2024.3467345",

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volume = "34",

pages = "1347--1350",

journal = "IEEE Microwave and Wireless Technology Letters",

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number = "12",

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T1 - Efficiency Enhancement of Class-J Power Amplifiers by Injecting Second Harmonic Into the Gate and Drain Node Simultaneously

AU - Liu, Chang

AU - Sun, Qi

AU - Wu, Han Dong

AU - Zhang, Hao

AU - Ghannouchi, Fadhel M.

PY - 2024

Y1 - 2024

N2 - In this letter, a design methodology is proposed to improve the efficiency of class-J power amplifiers (PAs). By injecting the second harmonic into the gate and drain node simultaneously, both the intrinsic drain voltage and current waveforms of the ideal class-J PA are reshaped, leading to a smaller phase shift, and consequently, higher efficiency has been obtained. In addition, the detailed design guideline of the proposed structure is provided. Based on it, a proof-of-concept circuit with a commercial GaN transistor is designed. The measured result shows the power-added efficiency (PAE) of 78.6% and gain of 14.3 dB at 1.69 GHz. To the best of our knowledge, this is the highest PAE of class-J PAs at L-band.

AB - In this letter, a design methodology is proposed to improve the efficiency of class-J power amplifiers (PAs). By injecting the second harmonic into the gate and drain node simultaneously, both the intrinsic drain voltage and current waveforms of the ideal class-J PA are reshaped, leading to a smaller phase shift, and consequently, higher efficiency has been obtained. In addition, the detailed design guideline of the proposed structure is provided. Based on it, a proof-of-concept circuit with a commercial GaN transistor is designed. The measured result shows the power-added efficiency (PAE) of 78.6% and gain of 14.3 dB at 1.69 GHz. To the best of our knowledge, this is the highest PAE of class-J PAs at L-band.

KW - Class-J

KW - harmonic injection (HI) at the gate and drain node

KW - high efficiency

KW - power amplifiers (PAs)

KW - waveform reshaping

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DO - 10.1109/LMWT.2024.3467345

M3 - 文章

AN - SCOPUS:85212066750

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JO - IEEE Microwave and Wireless Technology Letters

JF - IEEE Microwave and Wireless Technology Letters

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ER -

Efficiency Enhancement of Class-J Power Amplifiers by Injecting Second Harmonic Into the Gate and Drain Node Simultaneously

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