Effects of post-growth annealing on the performance of CdZnTe: In radiation detectors with different thickness

Pengfei Yu, Wanqi Jie

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

An effective post-growth annealing method was used to improve the performance of CdZnTe:In (CZT:In) radiation detectors. The results indicated that Te inclusions in CZT:In crystals with different thickness were eliminated completely after annealing. Both the resistivity and IR transmittance of annealed CZT:In crystals with different thickness increased obviously, which suggested that the crystal quality was improved. For the detector fabricated by annealed CZT:In slices with 2 mm thickness, the energy resolution and (μτ)e value were enhanced about 63% and 115%, respectively. And for that fabricated by annealed CZT:In slices with 5 mm thickness, the energy resolution and (μτ)e value were enhanced about 300% and 88%, respectively.

Original languageEnglish
Pages (from-to)29-32
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume737
DOIs
StatePublished - 11 Feb 2014
Externally publishedYes

Keywords

  • CdZnTe:In
  • IR transmittance
  • Radiation detector
  • Resistivity
  • Te inclusions

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