Effects of partial melting process on Jc of Bi-2212/Ag tapes

Yusong Liu; Pingxiang Zhang; Chengshan Li; Zeming Yu; Huiling Zheng; Xiaomei Xiong; Fengsheng Liu; Qingyang Wang; Bing Jiang; Yong Feng; Lian Zhou

Effects of partial melting process on J_c of Bi-2212/Ag tapes

Yusong Liu
, Pingxiang Zhang
, Chengshan Li
, Zeming Yu
, Huiling Zheng
, Xiaomei Xiong
, Fengsheng Liu
, Qingyang Wang
, Bing Jiang
, Yong Feng
, Lian Zhou

Northeastern University China
NW Inst. for Nonferrous Metal Res.

Research output: Contribution to journal › Article › peer-review

Abstract

In order to improve the performances of Bi-2212/Ag tapes (mainly refer to critical current density J_c), the experiment for effects of partial melting process on J_c of the tapes was conducted. Standard 4-point method was used to measure J_c. PW1700 XRD, XL20 SEM and EDX were used to exam and study phase constitution and microstructure of the tapes. The results indicate that sintered at 860°C - 880°C in flowing oxygen atmosphere, Bi-2212 precursors have primary phase of Bi-2212 and a slight amount of Bi-2201 phase, (Sr,Ca)Cu₂O₃ phase and rich (Bi,Sr) phase. In flowing oxygen atmosphere, processing parameters have critical effects on J_c of the Bi-2212/Ag tape. The optimized processing parameters are that melting temperature T_max is 890°C, melting time t_max is 10 min and cooling rate R_c is 2°C/h. At 835°C, the optimized holding time t_a is 20 h. By optimizing partial melting process, the maximum I_c of the final tapes is 6 A and J_c is 890 A/cm² at 77 K, 0 T.

Original language	English
Pages (from-to)	793-796
Number of pages	4
Journal	Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
Volume	33
Issue number	8
State	Published - Aug 2004
Externally published	Yes

Keywords

Bi-2212/Ag
Partial melting
Precursor

Cite this

@article{64aa2750a3eb4461ad931f756174eb0f,

title = "Effects of partial melting process on Jc of Bi-2212/Ag tapes",

abstract = "In order to improve the performances of Bi-2212/Ag tapes (mainly refer to critical current density Jc), the experiment for effects of partial melting process on Jc of the tapes was conducted. Standard 4-point method was used to measure Jc. PW1700 XRD, XL20 SEM and EDX were used to exam and study phase constitution and microstructure of the tapes. The results indicate that sintered at 860°C - 880°C in flowing oxygen atmosphere, Bi-2212 precursors have primary phase of Bi-2212 and a slight amount of Bi-2201 phase, (Sr,Ca)Cu2O3 phase and rich (Bi,Sr) phase. In flowing oxygen atmosphere, processing parameters have critical effects on Jc of the Bi-2212/Ag tape. The optimized processing parameters are that melting temperature Tmax is 890°C, melting time tmax is 10 min and cooling rate Rc is 2°C/h. At 835°C, the optimized holding time ta is 20 h. By optimizing partial melting process, the maximum Ic of the final tapes is 6 A and Jc is 890 A/cm2 at 77 K, 0 T.",

keywords = "Bi-2212/Ag, Partial melting, Precursor",

author = "Yusong Liu and Pingxiang Zhang and Chengshan Li and Zeming Yu and Huiling Zheng and Xiaomei Xiong and Fengsheng Liu and Qingyang Wang and Bing Jiang and Yong Feng and Lian Zhou",

year = "2004",

month = aug,

language = "英语",

volume = "33",

pages = "793--796",

journal = "Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering",

issn = "1002-185X",

publisher = "Science Press ",

number = "8",

}

TY - JOUR

T1 - Effects of partial melting process on Jc of Bi-2212/Ag tapes

AU - Liu, Yusong

AU - Zhang, Pingxiang

AU - Li, Chengshan

AU - Yu, Zeming

AU - Zheng, Huiling

AU - Xiong, Xiaomei

AU - Liu, Fengsheng

AU - Wang, Qingyang

AU - Jiang, Bing

AU - Feng, Yong

AU - Zhou, Lian

PY - 2004/8

Y1 - 2004/8

N2 - In order to improve the performances of Bi-2212/Ag tapes (mainly refer to critical current density Jc), the experiment for effects of partial melting process on Jc of the tapes was conducted. Standard 4-point method was used to measure Jc. PW1700 XRD, XL20 SEM and EDX were used to exam and study phase constitution and microstructure of the tapes. The results indicate that sintered at 860°C - 880°C in flowing oxygen atmosphere, Bi-2212 precursors have primary phase of Bi-2212 and a slight amount of Bi-2201 phase, (Sr,Ca)Cu2O3 phase and rich (Bi,Sr) phase. In flowing oxygen atmosphere, processing parameters have critical effects on Jc of the Bi-2212/Ag tape. The optimized processing parameters are that melting temperature Tmax is 890°C, melting time tmax is 10 min and cooling rate Rc is 2°C/h. At 835°C, the optimized holding time ta is 20 h. By optimizing partial melting process, the maximum Ic of the final tapes is 6 A and Jc is 890 A/cm2 at 77 K, 0 T.

AB - In order to improve the performances of Bi-2212/Ag tapes (mainly refer to critical current density Jc), the experiment for effects of partial melting process on Jc of the tapes was conducted. Standard 4-point method was used to measure Jc. PW1700 XRD, XL20 SEM and EDX were used to exam and study phase constitution and microstructure of the tapes. The results indicate that sintered at 860°C - 880°C in flowing oxygen atmosphere, Bi-2212 precursors have primary phase of Bi-2212 and a slight amount of Bi-2201 phase, (Sr,Ca)Cu2O3 phase and rich (Bi,Sr) phase. In flowing oxygen atmosphere, processing parameters have critical effects on Jc of the Bi-2212/Ag tape. The optimized processing parameters are that melting temperature Tmax is 890°C, melting time tmax is 10 min and cooling rate Rc is 2°C/h. At 835°C, the optimized holding time ta is 20 h. By optimizing partial melting process, the maximum Ic of the final tapes is 6 A and Jc is 890 A/cm2 at 77 K, 0 T.

KW - Bi-2212/Ag

KW - Partial melting

KW - Precursor

UR - https://www.scopus.com/pages/publications/8844244912

M3 - 文章

AN - SCOPUS:8844244912

SN - 1002-185X

VL - 33

SP - 793

EP - 796

JO - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

JF - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

IS - 8

ER -

Effects of partial melting process on J_c of Bi-2212/Ag tapes

Abstract

Keywords

Other files and links

Fingerprint

Cite this