Abstract
Polycarbosilane (PCS) was cured by oxidizing at different temperatures and pyrolyzed at 1000°C in vacuum. The dielectric properties of SiC ceramics were studied in X band. The ε′ and ε of SiC ceramics derived from oxidation-curing PCS decreased to 4 and 0.35, respectively, which attribute to the decrease of free carbon content and order. SiC ceramic derived from PCS cured at 180°C showed that reflection loss was lower than -10 dB in the frequency range from 8.2 to 11.3 GHz and the minimum value was -26.7 dB at 9.6 GHz, which exhibits a promising prospect as microwave-absorbing materials.
| Original language | English |
|---|---|
| Pages (from-to) | 17-22 |
| Number of pages | 6 |
| Journal | International Journal of Applied Ceramic Technology |
| Volume | 13 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1 Jan 2016 |
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