Effects of O₂ Partial Pressure on Composition and Infrared Emissivity of PtO_x Films Prepared by Reactive Magnetron Sputtering

PtO_x films have been prepared by reactive magnetron sputtering on glass substrates without external heating and characterized by x-ray diffraction (XRD) analysis, x-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). The resulting PtO_x films mainly consisted of amorphous PtO and PtO₂, and the composition largely depended on the O₂ partial pressure during sputtering. In this study, the effects of the O₂ partial pressure on the deposition rate, composition, surface morphology, structure, electrical resistivity, and infrared emissivity of the as-deposited PtO_x films were evaluated. It was found that, with increase in the O₂ partial pressure, the O/Pt atomic ratio, resistivity, and infrared emissivity of the as-deposited PtO_x film increased, while the deposition rate first increased then decreased with increasing O₂ partial pressure. In addition, the O₂ partial pressure had little influence on the structure or surface morphology of the as-deposited PtO_x film.