Effects of film thickness and Ar/O2 ratio on resistive switching characteristics of HfOx-based resistive-switching random access memories

Ting Ting Guo; Ting Ting Tan; Zheng Tang Liu

doi:10.1088/0256-307X/32/1/016801

Effects of film thickness and Ar/O₂ ratio on resistive switching characteristics of HfO_x-based resistive-switching random access memories

Ting Ting Guo
, Ting Ting Tan
, Zheng Tang Liu

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Cu/HfO_x/n⁺ Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/O₂ ratio on the resistive switching (RS) characteristics of HfO_x films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects (oxygen vacancies) in the film. The sample with thickness of 20 nm and Ar/O₂ ratio of 12:3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model.

Original language	English
Article number	016801
Journal	Chinese Physics Letters
Volume	32
Issue number	1
DOIs	https://doi.org/10.1088/0256-307X/32/1/016801
State	Published - 1 Jan 2015
Externally published	Yes

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title = "Effects of film thickness and Ar/O2 ratio on resistive switching characteristics of HfOx-based resistive-switching random access memories",

abstract = "Cu/HfOx/n+ Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/O2 ratio on the resistive switching (RS) characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects (oxygen vacancies) in the film. The sample with thickness of 20 nm and Ar/O2 ratio of 12:3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model.",

author = "Guo, \{Ting Ting\} and Tan, \{Ting Ting\} and Liu, \{Zheng Tang\}",

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doi = "10.1088/0256-307X/32/1/016801",

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AU - Guo, Ting Ting

AU - Tan, Ting Ting

AU - Liu, Zheng Tang

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Cu/HfOx/n+ Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/O2 ratio on the resistive switching (RS) characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects (oxygen vacancies) in the film. The sample with thickness of 20 nm and Ar/O2 ratio of 12:3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model.

AB - Cu/HfOx/n+ Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/O2 ratio on the resistive switching (RS) characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects (oxygen vacancies) in the film. The sample with thickness of 20 nm and Ar/O2 ratio of 12:3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model.

UR - https://www.scopus.com/pages/publications/84920848248

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DO - 10.1088/0256-307X/32/1/016801

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JO - Chinese Physics Letters

JF - Chinese Physics Letters

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ER -

Effects of film thickness and Ar/O₂ ratio on resistive switching characteristics of HfO_x-based resistive-switching random access memories

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