Effect of N 2-gas flow rates on the structures and properties of copper nitride films prepared by reactive DC magnetron sputtering

Xing'Ao Li; Qiufei Bai; Jianping Yang; Yongtao Li; Lixia Wang; Haiyun Wang; Shanling Ren; Shengli Liu; Wei Huang

doi:10.1016/j.vacuum.2011.10.020

Effect of N ₂-gas flow rates on the structures and properties of copper nitride films prepared by reactive DC magnetron sputtering

Xing'Ao Li, Qiufei Bai, Jianping Yang, Yongtao Li, Lixia Wang, Haiyun Wang, Shanling Ren, Shengli Liu, Wei Huang

Nanjing University of Posts and Telecommunications

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Copper nitride films were deposited on glass substrates by reactive DC magnetron sputtering at 100 °C substrate temperature. The influence of N ₂-gas flow rates on the structure, resistivity and microhardness of deposited films was investigated. X-ray diffraction measurements showed that the films were composed of Cu ₃N crystallites with anti-ReO ₃ structure and exhibited preferential orientation to the [111] and [100]. The preferred crystalline orientation of the films changed with the N ₂-gas flow rate, which should caused by the variation of Cu nitrification rate with N ₂-gas flow rate. Additionally, the N ₂-gas flow rate also affected the deposition rate, the resistivity and the microhardness of the Cu ₃N films. The optimum N ₂-gas flow rate for producing high-quality and well-oriented Cu ₃N films on glass substrates is 5-10 sccm, where the substrate temperature is 100°C and the DC power is 50 W.

Original language	English
Pages (from-to)	78-81
Number of pages	4
Journal	Vacuum
Volume	89
Issue number	1
DOIs	https://doi.org/10.1016/j.vacuum.2011.10.020
State	Published - Mar 2013
Externally published	Yes

Keywords

Copper nitride thin film
DC magnetron sputtering
N -gas flow rates
Resistivity

Access to Document

10.1016/j.vacuum.2011.10.020

Cite this

@article{bde2aa291fa34e759778d97d8f4a43ea,

title = "Effect of N 2-gas flow rates on the structures and properties of copper nitride films prepared by reactive DC magnetron sputtering",

abstract = "Copper nitride films were deposited on glass substrates by reactive DC magnetron sputtering at 100 °C substrate temperature. The influence of N 2-gas flow rates on the structure, resistivity and microhardness of deposited films was investigated. X-ray diffraction measurements showed that the films were composed of Cu 3N crystallites with anti-ReO 3 structure and exhibited preferential orientation to the [111] and [100]. The preferred crystalline orientation of the films changed with the N 2-gas flow rate, which should caused by the variation of Cu nitrification rate with N 2-gas flow rate. Additionally, the N 2-gas flow rate also affected the deposition rate, the resistivity and the microhardness of the Cu 3N films. The optimum N 2-gas flow rate for producing high-quality and well-oriented Cu 3N films on glass substrates is 5-10 sccm, where the substrate temperature is 100°C and the DC power is 50 W.",

keywords = "Copper nitride thin film, DC magnetron sputtering, N -gas flow rates, Resistivity",

author = "Xing'Ao Li and Qiufei Bai and Jianping Yang and Yongtao Li and Lixia Wang and Haiyun Wang and Shanling Ren and Shengli Liu and Wei Huang",

year = "2013",

month = mar,

doi = "10.1016/j.vacuum.2011.10.020",

language = "英语",

volume = "89",

pages = "78--81",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd",

number = "1",

}

TY - JOUR

T1 - Effect of N 2-gas flow rates on the structures and properties of copper nitride films prepared by reactive DC magnetron sputtering

AU - Li, Xing'Ao

AU - Bai, Qiufei

AU - Yang, Jianping

AU - Li, Yongtao

AU - Wang, Lixia

AU - Wang, Haiyun

AU - Ren, Shanling

AU - Liu, Shengli

AU - Huang, Wei

PY - 2013/3

Y1 - 2013/3

N2 - Copper nitride films were deposited on glass substrates by reactive DC magnetron sputtering at 100 °C substrate temperature. The influence of N 2-gas flow rates on the structure, resistivity and microhardness of deposited films was investigated. X-ray diffraction measurements showed that the films were composed of Cu 3N crystallites with anti-ReO 3 structure and exhibited preferential orientation to the [111] and [100]. The preferred crystalline orientation of the films changed with the N 2-gas flow rate, which should caused by the variation of Cu nitrification rate with N 2-gas flow rate. Additionally, the N 2-gas flow rate also affected the deposition rate, the resistivity and the microhardness of the Cu 3N films. The optimum N 2-gas flow rate for producing high-quality and well-oriented Cu 3N films on glass substrates is 5-10 sccm, where the substrate temperature is 100°C and the DC power is 50 W.

AB - Copper nitride films were deposited on glass substrates by reactive DC magnetron sputtering at 100 °C substrate temperature. The influence of N 2-gas flow rates on the structure, resistivity and microhardness of deposited films was investigated. X-ray diffraction measurements showed that the films were composed of Cu 3N crystallites with anti-ReO 3 structure and exhibited preferential orientation to the [111] and [100]. The preferred crystalline orientation of the films changed with the N 2-gas flow rate, which should caused by the variation of Cu nitrification rate with N 2-gas flow rate. Additionally, the N 2-gas flow rate also affected the deposition rate, the resistivity and the microhardness of the Cu 3N films. The optimum N 2-gas flow rate for producing high-quality and well-oriented Cu 3N films on glass substrates is 5-10 sccm, where the substrate temperature is 100°C and the DC power is 50 W.

KW - Copper nitride thin film

KW - DC magnetron sputtering

KW - N -gas flow rates

KW - Resistivity

UR - https://www.scopus.com/pages/publications/84869087887

U2 - 10.1016/j.vacuum.2011.10.020

DO - 10.1016/j.vacuum.2011.10.020

M3 - 文章

AN - SCOPUS:84869087887

SN - 0042-207X

VL - 89

SP - 78

EP - 81

JO - Vacuum

JF - Vacuum

IS - 1

ER -

Effect of N ₂-gas flow rates on the structures and properties of copper nitride films prepared by reactive DC magnetron sputtering

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this