Effect of boron doping on microwave dielectric properties of SiC powder synthesized by combustion synthesis

Zhimin Li; Wancheng Zhou; Xiaolei Su; Fa Luo; Yunxia Huang; Cheng Wang

doi:10.1016/j.jallcom.2010.08.156

Effect of boron doping on microwave dielectric properties of SiC powder synthesized by combustion synthesis

Zhimin Li, Wancheng Zhou, Xiaolei Su, Fa Luo, Yunxia Huang, Cheng Wang

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

61 Scopus citations

Abstract

Boron-doped SiC powders were synthesized from the Si/C/B system in a nitrogen atmosphere by combustion synthesis. Results showed that boron benefited the crystallization of β-SiC, and that SiC solid solution with B acceptor doping was generated in combustion process. In the frequency range of 8.2-12.4 GHz, it was found that both real part ε′ and imaginary part ε′′ of complex permittivity of SiC samples decreased firstly, and then increased with increasing B content.

Original language	English
Pages (from-to)	973-976
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	509
Issue number	3
DOIs	https://doi.org/10.1016/j.jallcom.2010.08.156
State	Published - 21 Jan 2011

Keywords

B doping
Combustion synthesis
Dielectric properties
Point defects
SiC

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10.1016/j.jallcom.2010.08.156

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title = "Effect of boron doping on microwave dielectric properties of SiC powder synthesized by combustion synthesis",

abstract = "Boron-doped SiC powders were synthesized from the Si/C/B system in a nitrogen atmosphere by combustion synthesis. Results showed that boron benefited the crystallization of β-SiC, and that SiC solid solution with B acceptor doping was generated in combustion process. In the frequency range of 8.2-12.4 GHz, it was found that both real part ε′ and imaginary part ε′′ of complex permittivity of SiC samples decreased firstly, and then increased with increasing B content.",

keywords = "B doping, Combustion synthesis, Dielectric properties, Point defects, SiC",

author = "Zhimin Li and Wancheng Zhou and Xiaolei Su and Fa Luo and Yunxia Huang and Cheng Wang",

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T1 - Effect of boron doping on microwave dielectric properties of SiC powder synthesized by combustion synthesis

AU - Li, Zhimin

AU - Zhou, Wancheng

AU - Su, Xiaolei

AU - Luo, Fa

AU - Huang, Yunxia

AU - Wang, Cheng

PY - 2011/1/21

Y1 - 2011/1/21

N2 - Boron-doped SiC powders were synthesized from the Si/C/B system in a nitrogen atmosphere by combustion synthesis. Results showed that boron benefited the crystallization of β-SiC, and that SiC solid solution with B acceptor doping was generated in combustion process. In the frequency range of 8.2-12.4 GHz, it was found that both real part ε′ and imaginary part ε′′ of complex permittivity of SiC samples decreased firstly, and then increased with increasing B content.

AB - Boron-doped SiC powders were synthesized from the Si/C/B system in a nitrogen atmosphere by combustion synthesis. Results showed that boron benefited the crystallization of β-SiC, and that SiC solid solution with B acceptor doping was generated in combustion process. In the frequency range of 8.2-12.4 GHz, it was found that both real part ε′ and imaginary part ε′′ of complex permittivity of SiC samples decreased firstly, and then increased with increasing B content.

KW - B doping

KW - Combustion synthesis

KW - Dielectric properties

KW - Point defects

KW - SiC

UR - http://www.scopus.com/inward/record.url?scp=78449233571&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2010.08.156

DO - 10.1016/j.jallcom.2010.08.156

M3 - 文章

AN - SCOPUS:78449233571

SN - 0925-8388

VL - 509

SP - 973

EP - 976

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 3

ER -

Effect of boron doping on microwave dielectric properties of SiC powder synthesized by combustion synthesis

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Keywords

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