Abstract
ZnO(1-x)TiO2-xSnO2 (x = 0.04-0.20) ceramics were prepared by conventional mixed-oxide method combined with a semi-chemical processing. 1.0% 3V2O5-B2O3 addition was used to lower the sintering temperature of ceramics. The effect of B-site substitution on phase structure and dielectric properties were investigated. The results showed that the substituting Sn for Ti accelerated the decomposition of hexagonal phase, and cubic spinel Zn2 (Ti1-xSnx)O4 solid solution formed. The best dielectric properties obtained at x = 0.12. The ZnO-0.88TiO2-0.12SnO2 ceramics sintered at 900°C exhibited the dielectric properties: ε = 29, tan δ = 9.86 × 10-5. Due to their good dielectric properties, low firing characteristics, ZnO(1-x)TiO2-xSnO2 (x = 0.04-0.20) can serve as the microwave dielectric capacitor.
| Original language | English |
|---|---|
| Pages (from-to) | 565-567 |
| Number of pages | 3 |
| Journal | Yadian Yu Shengguang/Piezoelectrics and Acoustooptics |
| Volume | 29 |
| Issue number | 5 |
| State | Published - Oct 2007 |
Keywords
- B-site substitution
- Dielectric properties
- Low-temperature sintering
- Phase structure
- Zinc titanate
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