Dual role of LiF as a hole-injection buffer in organic light-emitting diodes

J. M. Zhao; S. T. Zhang; X. J. Wang; Y. Q. Zhan; X. Z. Wang; G. Y. Zhong; Z. J. Wang; X. M. Ding; W. Huang; X. Y. Hou

doi:10.1063/1.1695444

Dual role of LiF as a hole-injection buffer in organic light-emitting diodes

J. M. Zhao
, S. T. Zhang
, X. J. Wang
, Y. Q. Zhan
, X. Z. Wang
, G. Y. Zhong
, Z. J. Wang
, X. M. Ding
, W. Huang
, X. Y. Hou

Fudan University

Research output: Contribution to journal › Article › peer-review

83 Scopus citations

Abstract

The effect of LiF buffer layer on hole-injection in indium-tin oxide (ITO)\N,N′-bis(1-naphthyl)-N,Ǹ -diphenyl-1,1′ biphenyl 4,4′ -diamine (NPB)-based organic light-emitting diodes (OLED) was discussed. It was found that hole-injection in ITO\NPB-based OLEDs depended upon the initial barrier height (IBH) at ITO\NPB interfaces. It was observed that LiF buffer enchanced the hole injection when the IBH was large but it weakened the hole injection when the IBH was small. Analysis shows that the variation of current injection induced by the insulating buffers in OLEDs was the result of energy realignment and the change in carrier tunneling probability.

Original language	English
Pages (from-to)	2913-2915
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	15
DOIs	https://doi.org/10.1063/1.1695444
State	Published - 12 Apr 2004
Externally published	Yes

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@article{a1278bea1732462cb1fd7fc63d6f5ee8,

title = "Dual role of LiF as a hole-injection buffer in organic light-emitting diodes",

abstract = "The effect of LiF buffer layer on hole-injection in indium-tin oxide (ITO)\textbackslash{}N,N′-bis(1-naphthyl)-N,Ǹ -diphenyl-1,1′ biphenyl 4,4′ -diamine (NPB)-based organic light-emitting diodes (OLED) was discussed. It was found that hole-injection in ITO\textbackslash{}NPB-based OLEDs depended upon the initial barrier height (IBH) at ITO\textbackslash{}NPB interfaces. It was observed that LiF buffer enchanced the hole injection when the IBH was large but it weakened the hole injection when the IBH was small. Analysis shows that the variation of current injection induced by the insulating buffers in OLEDs was the result of energy realignment and the change in carrier tunneling probability.",

author = "Zhao, \{J. M.\} and Zhang, \{S. T.\} and Wang, \{X. J.\} and Zhan, \{Y. Q.\} and Wang, \{X. Z.\} and Zhong, \{G. Y.\} and Wang, \{Z. J.\} and Ding, \{X. M.\} and W. Huang and Hou, \{X. Y.\}",

year = "2004",

month = apr,

day = "12",

doi = "10.1063/1.1695444",

language = "英语",

volume = "84",

pages = "2913--2915",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Dual role of LiF as a hole-injection buffer in organic light-emitting diodes

AU - Zhao, J. M.

AU - Zhang, S. T.

AU - Wang, X. J.

AU - Zhan, Y. Q.

AU - Wang, X. Z.

AU - Zhong, G. Y.

AU - Wang, Z. J.

AU - Ding, X. M.

AU - Huang, W.

AU - Hou, X. Y.

PY - 2004/4/12

Y1 - 2004/4/12

N2 - The effect of LiF buffer layer on hole-injection in indium-tin oxide (ITO)\N,N′-bis(1-naphthyl)-N,Ǹ -diphenyl-1,1′ biphenyl 4,4′ -diamine (NPB)-based organic light-emitting diodes (OLED) was discussed. It was found that hole-injection in ITO\NPB-based OLEDs depended upon the initial barrier height (IBH) at ITO\NPB interfaces. It was observed that LiF buffer enchanced the hole injection when the IBH was large but it weakened the hole injection when the IBH was small. Analysis shows that the variation of current injection induced by the insulating buffers in OLEDs was the result of energy realignment and the change in carrier tunneling probability.

AB - The effect of LiF buffer layer on hole-injection in indium-tin oxide (ITO)\N,N′-bis(1-naphthyl)-N,Ǹ -diphenyl-1,1′ biphenyl 4,4′ -diamine (NPB)-based organic light-emitting diodes (OLED) was discussed. It was found that hole-injection in ITO\NPB-based OLEDs depended upon the initial barrier height (IBH) at ITO\NPB interfaces. It was observed that LiF buffer enchanced the hole injection when the IBH was large but it weakened the hole injection when the IBH was small. Analysis shows that the variation of current injection induced by the insulating buffers in OLEDs was the result of energy realignment and the change in carrier tunneling probability.

UR - https://www.scopus.com/pages/publications/2342450604

U2 - 10.1063/1.1695444

DO - 10.1063/1.1695444

M3 - 文章

AN - SCOPUS:2342450604

SN - 0003-6951

VL - 84

SP - 2913

EP - 2915

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Dual role of LiF as a hole-injection buffer in organic light-emitting diodes

Abstract

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