Dielectric properties investigation of Cu2O/ZnO heterojunction thin films by electrodeposition

Qiang Li; Mengmeng Xu; Huiqing Fan; Hairong Wang; Biaolin Peng; Changbai Long; Yuchun Zhai

doi:10.1016/j.mseb.2013.02.004

Dielectric properties investigation of Cu₂O/ZnO heterojunction thin films by electrodeposition

Qiang Li
, Mengmeng Xu
, Huiqing Fan
, Hairong Wang
, Biaolin Peng
, Changbai Long
, Yuchun Zhai

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Structures and morphologies of the Cu₂O/ZnO heterojunction electrodeposited on indium tin oxide (ITO) flexible substrate (polyethylene terephthalate-PET) were investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), high resolution transmission electron microscopy (HRTEM), respectively. The dielectric response of bottom-up self-assembly Cu₂O/ZnO heterojunction was investigated. The low frequency dielectric dispersion (LFDD) was observed. The universal dielectric response (UDR) was used to investigate the frequency dependence of dielectric response for Cu₂O/ZnO heterojunction, which was attributed to the long range and the short range hopping charge carriers at the low frequency and the high frequency region, respectively.

Original language	English
Pages (from-to)	496-501
Number of pages	6
Journal	Materials Science and Engineering: B
Volume	178
Issue number	8
DOIs	https://doi.org/10.1016/j.mseb.2013.02.004
State	Published - 1 May 2013

Keywords

Dielectric properties
Nanostructures

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10.1016/j.mseb.2013.02.004

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title = "Dielectric properties investigation of Cu2O/ZnO heterojunction thin films by electrodeposition",

abstract = "Structures and morphologies of the Cu2O/ZnO heterojunction electrodeposited on indium tin oxide (ITO) flexible substrate (polyethylene terephthalate-PET) were investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), high resolution transmission electron microscopy (HRTEM), respectively. The dielectric response of bottom-up self-assembly Cu2O/ZnO heterojunction was investigated. The low frequency dielectric dispersion (LFDD) was observed. The universal dielectric response (UDR) was used to investigate the frequency dependence of dielectric response for Cu2O/ZnO heterojunction, which was attributed to the long range and the short range hopping charge carriers at the low frequency and the high frequency region, respectively.",

keywords = "Dielectric properties, Nanostructures",

author = "Qiang Li and Mengmeng Xu and Huiqing Fan and Hairong Wang and Biaolin Peng and Changbai Long and Yuchun Zhai",

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doi = "10.1016/j.mseb.2013.02.004",

language = "英语",

volume = "178",

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TY - JOUR

T1 - Dielectric properties investigation of Cu2O/ZnO heterojunction thin films by electrodeposition

AU - Li, Qiang

AU - Xu, Mengmeng

AU - Fan, Huiqing

AU - Wang, Hairong

AU - Peng, Biaolin

AU - Long, Changbai

AU - Zhai, Yuchun

PY - 2013/5/1

Y1 - 2013/5/1

N2 - Structures and morphologies of the Cu2O/ZnO heterojunction electrodeposited on indium tin oxide (ITO) flexible substrate (polyethylene terephthalate-PET) were investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), high resolution transmission electron microscopy (HRTEM), respectively. The dielectric response of bottom-up self-assembly Cu2O/ZnO heterojunction was investigated. The low frequency dielectric dispersion (LFDD) was observed. The universal dielectric response (UDR) was used to investigate the frequency dependence of dielectric response for Cu2O/ZnO heterojunction, which was attributed to the long range and the short range hopping charge carriers at the low frequency and the high frequency region, respectively.

AB - Structures and morphologies of the Cu2O/ZnO heterojunction electrodeposited on indium tin oxide (ITO) flexible substrate (polyethylene terephthalate-PET) were investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), high resolution transmission electron microscopy (HRTEM), respectively. The dielectric response of bottom-up self-assembly Cu2O/ZnO heterojunction was investigated. The low frequency dielectric dispersion (LFDD) was observed. The universal dielectric response (UDR) was used to investigate the frequency dependence of dielectric response for Cu2O/ZnO heterojunction, which was attributed to the long range and the short range hopping charge carriers at the low frequency and the high frequency region, respectively.

KW - Dielectric properties

KW - Nanostructures

UR - https://www.scopus.com/pages/publications/84875737481

U2 - 10.1016/j.mseb.2013.02.004

DO - 10.1016/j.mseb.2013.02.004

M3 - 文章

AN - SCOPUS:84875737481

SN - 0921-5107

VL - 178

SP - 496

EP - 501

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 8

ER -

Dielectric properties investigation of Cu₂O/ZnO heterojunction thin films by electrodeposition

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Keywords

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