TY - JOUR
T1 - Dendritic wideband metamaterial absorber based on resistance film
AU - Wang, Bing
AU - Gong, Bo Yi
AU - Wang, Mei
AU - Weng, Bin
AU - Zhao, Xiaopeng
N1 - Publisher Copyright:
© 2014, Springer-Verlag Berlin Heidelberg.
PY - 2014/3
Y1 - 2014/3
N2 - A type of dendritic wideband metamaterial absorber was designed and constructed from resistance film composed of indium-tin oxide conductive film having a dendritic metamaterial structure, dielectric layer made of polymethacrylimide foam, and metallic sheet based on the equivalent circuit model. In terms of normal incidence, the simulation using the absorber yielded operating absorption rates >80 % in the frequency range of 8–27.9 GHz. In addition, the experimental measurements verified 8–17 GHz range of more than 80 % absorption rate, whereas its relative bandwidth reached 72 %. Moreover, this reasonable absorption performance was maintained for oblique incidences of <60°. The effects of dielectric layer thickness on absorption properties were verified.
AB - A type of dendritic wideband metamaterial absorber was designed and constructed from resistance film composed of indium-tin oxide conductive film having a dendritic metamaterial structure, dielectric layer made of polymethacrylimide foam, and metallic sheet based on the equivalent circuit model. In terms of normal incidence, the simulation using the absorber yielded operating absorption rates >80 % in the frequency range of 8–27.9 GHz. In addition, the experimental measurements verified 8–17 GHz range of more than 80 % absorption rate, whereas its relative bandwidth reached 72 %. Moreover, this reasonable absorption performance was maintained for oblique incidences of <60°. The effects of dielectric layer thickness on absorption properties were verified.
UR - http://www.scopus.com/inward/record.url?scp=84925503569&partnerID=8YFLogxK
U2 - 10.1007/s00339-014-8941-y
DO - 10.1007/s00339-014-8941-y
M3 - 文章
AN - SCOPUS:84925503569
SN - 0947-8396
VL - 118
SP - 1559
EP - 1563
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 4
ER -