TY - JOUR
T1 - Correlation between ingot diameter and crystal properties of CdZnTe:In grown by the modified bridgman method
AU - Yang, Ge
AU - Jie, Wanqi
AU - Wang, Tao
AU - Li, Guoqiang
AU - Li, Wenwei
AU - Hua, Hui
PY - 2007/2
Y1 - 2007/2
N2 - The compound semiconductor CdZnTe:In is the most promising material for room temperature nuclear radiation detectors. Enlarging the diameter of CdZnTe:In ingot can improve the yield and reduce the production cost, which, however, affects the properties of CdZnTe:In to some extent. Recently, CdZnTe:In ingots of 30 mm and 60 mm diameter were grown by the modified vertical Bridgman method in our laboratory. The crystal properties of both ingots were compared according to etch pit density (EPD) of dislocation, X-ray rocking curve, IR transmission spectra, and photoluminescence (PL) spectra. For the CdZnTe:In ingot of 30 mm diameter, the EPD of dislocation was 2.1 × 104 cm-2, and was up to 1.9 × 105 cm-2 when the CdZnTe:In ingot diameter was enlarged to 60 mm. The full width at half-maximum (FWHM) of X-ray rocking also increased from 0.02014° to 0.02864° at the same time. The two phenomena imply that the crystalline quality of CdZnTe:In deteriorated with the enlarging of the ingot diameter. In addition, when the CdZnTe:In ingot diameter was varied from 30 to 60 mm, the average IR transmittance increased from 27 to 33%. The augmentation of dislocation was responsible for the change, which was confirmed by the improvement of the intensity of the dislocation-related D peak in the PL spectra.
AB - The compound semiconductor CdZnTe:In is the most promising material for room temperature nuclear radiation detectors. Enlarging the diameter of CdZnTe:In ingot can improve the yield and reduce the production cost, which, however, affects the properties of CdZnTe:In to some extent. Recently, CdZnTe:In ingots of 30 mm and 60 mm diameter were grown by the modified vertical Bridgman method in our laboratory. The crystal properties of both ingots were compared according to etch pit density (EPD) of dislocation, X-ray rocking curve, IR transmission spectra, and photoluminescence (PL) spectra. For the CdZnTe:In ingot of 30 mm diameter, the EPD of dislocation was 2.1 × 104 cm-2, and was up to 1.9 × 105 cm-2 when the CdZnTe:In ingot diameter was enlarged to 60 mm. The full width at half-maximum (FWHM) of X-ray rocking also increased from 0.02014° to 0.02864° at the same time. The two phenomena imply that the crystalline quality of CdZnTe:In deteriorated with the enlarging of the ingot diameter. In addition, when the CdZnTe:In ingot diameter was varied from 30 to 60 mm, the average IR transmittance increased from 27 to 33%. The augmentation of dislocation was responsible for the change, which was confirmed by the improvement of the intensity of the dislocation-related D peak in the PL spectra.
UR - http://www.scopus.com/inward/record.url?scp=33847261489&partnerID=8YFLogxK
U2 - 10.1021/cg060464u
DO - 10.1021/cg060464u
M3 - 文章
AN - SCOPUS:33847261489
SN - 1528-7483
VL - 7
SP - 435
EP - 438
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 2
ER -