Control of Resistive Switching Voltage by Nanoparticle-Decorated Wrinkle Interface

Control of resistive switching voltage in nonvolatile memory devices plays a critical role in building commercial ultra-low power data storage technology. Here, an effective strategy to control the resistive switching voltage in polymer memory devices by interfacial engineering is presented. By creating a wrinkled surface in reduced graphene oxide (rGO) film as the conductive electrode, an electrical bistable phenomenon is observed in polymer diode with this rGO electrode, with the feature of a write-once-read-many-times nonvolatile memory effect. By further employing silver nanoparticles and controlling their density at the wrinkled rGO electrode/polymer interface, the optimized device exhibits a high performance nonvolatile memory effect with an ultra-low switching voltage of 0.9 V, high ON/OFF ratio of 1000, and desirable long retention time over 10 ⁴ s. To the best knowledge, the value of switching voltage is much lower than that of previous related polymer memory devices. This study paves a new way toward ultra-low power manufacturing of nonvolatile polymer memory devices.