Complete logic operations in an ambipolar tellurium homojunction via non-invasive scanning probe lithography

The ongoing demand for the miniaturization of integrated circuits has incentivized research in low-dimensional semiconductors. Bulk tellurium (Te) naturally contains a 1D atomic chain architecture, but the performance of Te nanodevices is limited by synthesis strategy and lithographic techniques, which hamper their applications in nanoelectronics. In this work, we use non-invasive scanning probe lithography to fabricate high-performing Te field-effect transistors (FETs) using specially synthesized 1D Te nanoribbons. Ambipolar Te conduction is achieved with electron and hole conductivity mobilities exceeding 5 × 10⁴ and 1.3 × 10³ cm² V⁻¹ s⁻¹ for temperatures below 80 K, with on/off ratios of over 10⁸ and 10⁶, respectively. A p-n diode on a Te homojunction is constructed via a dual-gate configuration with a rectification ratio of over 10⁷. The single Te FET is demonstrated to perform seven basic logic operations, i.e., as an AND, OR, XOR, NOT, NAND, NOR, and XNOR gate.