Close-space sublimation growth and characterization of ZnTe epitaxial thick film

Jiawei Li; Gangqiang Zha; Yadong Xu; Shouzhi Xi; Yingrui Li; Rui Yang; Wanqi Jie

doi:10.1109/IRMMW-THz.2015.7327667

Close-space sublimation growth and characterization of ZnTe epitaxial thick film

Jiawei Li
, Gangqiang Zha
, Yadong Xu
, Shouzhi Xi
, Yingrui Li
, Rui Yang
, Wanqi Jie

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

ZnTe epitaxial film with thickness of 200μm was grown on the GaAs substrate by close-space sublimation (CSS). The surface topography of ZnTe film was analyzed by SEM, and the evolution of growth pit was observed, which revealed the mechanism of epitaxial growth. The structure was analyzed by X-ray radiation diffraction (XRD) θ-2θ scan and rotary φ-scan, and the results suggested that the ZnTe thick film is epitaxial film. The crystalline quality of ZnTe thick film was characterized by X-ray rocking curve and Raman spectrum, and the results suggested that ZnTe epitaxial film obtained by CSS could be as a replacement of ZnTe single crystal, especially for thinner and larger requirement.

Original language	English
Title of host publication	IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479982721
DOIs	https://doi.org/10.1109/IRMMW-THz.2015.7327667
State	Published - 11 Nov 2015
Event	40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015 - Hong Kong, China Duration: 23 Aug 2015 → 28 Aug 2015

Publication series

Name	IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves

Conference

Conference	40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015
Country/Territory	China
City	Hong Kong
Period	23/08/15 → 28/08/15

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10.1109/IRMMW-THz.2015.7327667

Cite this

Li, J., Zha, G., Xu, Y., Xi, S., Li, Y., Yang, R., & Jie, W. (2015). Close-space sublimation growth and characterization of ZnTe epitaxial thick film. In IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves Article 7327667 (IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRMMW-THz.2015.7327667

Li, Jiawei ; Zha, Gangqiang ; Xu, Yadong et al. / Close-space sublimation growth and characterization of ZnTe epitaxial thick film. IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves. Institute of Electrical and Electronics Engineers Inc., 2015. (IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves).

@inproceedings{dd7751cba8654898b489740099106c25,

title = "Close-space sublimation growth and characterization of ZnTe epitaxial thick film",

abstract = "ZnTe epitaxial film with thickness of 200μm was grown on the GaAs substrate by close-space sublimation (CSS). The surface topography of ZnTe film was analyzed by SEM, and the evolution of growth pit was observed, which revealed the mechanism of epitaxial growth. The structure was analyzed by X-ray radiation diffraction (XRD) θ-2θ scan and rotary φ-scan, and the results suggested that the ZnTe thick film is epitaxial film. The crystalline quality of ZnTe thick film was characterized by X-ray rocking curve and Raman spectrum, and the results suggested that ZnTe epitaxial film obtained by CSS could be as a replacement of ZnTe single crystal, especially for thinner and larger requirement.",

author = "Jiawei Li and Gangqiang Zha and Yadong Xu and Shouzhi Xi and Yingrui Li and Rui Yang and Wanqi Jie",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015 ; Conference date: 23-08-2015 Through 28-08-2015",

year = "2015",

month = nov,

day = "11",

doi = "10.1109/IRMMW-THz.2015.7327667",

language = "英语",

series = "IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves",

}

Li, J, Zha, G , Xu, Y, Xi, S, Li, Y, Yang, R & Jie, W 2015, Close-space sublimation growth and characterization of ZnTe epitaxial thick film. in IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves., 7327667, IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves, Institute of Electrical and Electronics Engineers Inc., 40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015, Hong Kong, China, 23/08/15. https://doi.org/10.1109/IRMMW-THz.2015.7327667

Close-space sublimation growth and characterization of ZnTe epitaxial thick film. / Li, Jiawei; Zha, Gangqiang ; Xu, Yadong et al.
IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves. Institute of Electrical and Electronics Engineers Inc., 2015. 7327667 (IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Close-space sublimation growth and characterization of ZnTe epitaxial thick film

AU - Li, Jiawei

AU - Zha, Gangqiang

AU - Xu, Yadong

AU - Xi, Shouzhi

AU - Li, Yingrui

AU - Yang, Rui

AU - Jie, Wanqi

PY - 2015/11/11

Y1 - 2015/11/11

N2 - ZnTe epitaxial film with thickness of 200μm was grown on the GaAs substrate by close-space sublimation (CSS). The surface topography of ZnTe film was analyzed by SEM, and the evolution of growth pit was observed, which revealed the mechanism of epitaxial growth. The structure was analyzed by X-ray radiation diffraction (XRD) θ-2θ scan and rotary φ-scan, and the results suggested that the ZnTe thick film is epitaxial film. The crystalline quality of ZnTe thick film was characterized by X-ray rocking curve and Raman spectrum, and the results suggested that ZnTe epitaxial film obtained by CSS could be as a replacement of ZnTe single crystal, especially for thinner and larger requirement.

AB - ZnTe epitaxial film with thickness of 200μm was grown on the GaAs substrate by close-space sublimation (CSS). The surface topography of ZnTe film was analyzed by SEM, and the evolution of growth pit was observed, which revealed the mechanism of epitaxial growth. The structure was analyzed by X-ray radiation diffraction (XRD) θ-2θ scan and rotary φ-scan, and the results suggested that the ZnTe thick film is epitaxial film. The crystalline quality of ZnTe thick film was characterized by X-ray rocking curve and Raman spectrum, and the results suggested that ZnTe epitaxial film obtained by CSS could be as a replacement of ZnTe single crystal, especially for thinner and larger requirement.

UR - https://www.scopus.com/pages/publications/84969141753

U2 - 10.1109/IRMMW-THz.2015.7327667

DO - 10.1109/IRMMW-THz.2015.7327667

M3 - 会议稿件

AN - SCOPUS:84969141753

T3 - IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves

BT - IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015

Y2 - 23 August 2015 through 28 August 2015

ER -

Li J, Zha G , Xu Y, Xi S, Li Y, Yang R et al. Close-space sublimation growth and characterization of ZnTe epitaxial thick film. In IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves. Institute of Electrical and Electronics Engineers Inc. 2015. 7327667. (IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves). doi: 10.1109/IRMMW-THz.2015.7327667

Close-space sublimation growth and characterization of ZnTe epitaxial thick film

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