Chemoselective reduction of graphene oxide and its application in nonvolatile organic transistor memory devices

Zhu Zhu Du; Wen Li; Wei Ai; Qiang Tai; Ling Hai Xie; Yong Cao; Ju Qing Liu; Ming Dong Yi; Hai Feng Ling; Zeng Hui Li; Wei Huang

doi:10.1039/c3ra43819h

Chemoselective reduction of graphene oxide and its application in nonvolatile organic transistor memory devices

Zhu Zhu Du
, Wen Li
, Wei Ai
, Qiang Tai
, Ling Hai Xie
, Yong Cao
, Ju Qing Liu
, Ming Dong Yi
, Hai Feng Ling
, Zeng Hui Li
, Wei Huang

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

A facile method for the chemoselective reduction of graphene oxide (CrGO) has been developed via silver(I)-catalyzed decarboxylation. CrGO was characterized by X-ray photoelectron spectroscopy and X-ray diffraction. CrGO can be well-dispersed in most polar solvents, facilitating its nanosheet thin film preparation via a spin coating solution process for device fabrication. A proof of concept nonvolatile organic transistor memory device using CrGO as the charge-trapping layer showed a larger memory window of over 60 V and a higher ON/OFF current ratio of up to 10⁴ compared to that of the precursor, graphene oxide (GO).

Original language	English
Pages (from-to)	25788-25791
Number of pages	4
Journal	RSC Advances
Volume	3
Issue number	48
DOIs	https://doi.org/10.1039/c3ra43819h
State	Published - 28 Dec 2013
Externally published	Yes

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@article{640af8e98b064dc3a9f8c1005d1deefc,

title = "Chemoselective reduction of graphene oxide and its application in nonvolatile organic transistor memory devices",

abstract = "A facile method for the chemoselective reduction of graphene oxide (CrGO) has been developed via silver(I)-catalyzed decarboxylation. CrGO was characterized by X-ray photoelectron spectroscopy and X-ray diffraction. CrGO can be well-dispersed in most polar solvents, facilitating its nanosheet thin film preparation via a spin coating solution process for device fabrication. A proof of concept nonvolatile organic transistor memory device using CrGO as the charge-trapping layer showed a larger memory window of over 60 V and a higher ON/OFF current ratio of up to 104 compared to that of the precursor, graphene oxide (GO).",

author = "Du, \{Zhu Zhu\} and Wen Li and Wei Ai and Qiang Tai and Xie, \{Ling Hai\} and Yong Cao and Liu, \{Ju Qing\} and Yi, \{Ming Dong\} and Ling, \{Hai Feng\} and Li, \{Zeng Hui\} and Wei Huang",

year = "2013",

month = dec,

day = "28",

doi = "10.1039/c3ra43819h",

language = "英语",

volume = "3",

pages = "25788--25791",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

number = "48",

}

TY - JOUR

T1 - Chemoselective reduction of graphene oxide and its application in nonvolatile organic transistor memory devices

AU - Du, Zhu Zhu

AU - Li, Wen

AU - Ai, Wei

AU - Tai, Qiang

AU - Xie, Ling Hai

AU - Cao, Yong

AU - Liu, Ju Qing

AU - Yi, Ming Dong

AU - Ling, Hai Feng

AU - Li, Zeng Hui

AU - Huang, Wei

PY - 2013/12/28

Y1 - 2013/12/28

N2 - A facile method for the chemoselective reduction of graphene oxide (CrGO) has been developed via silver(I)-catalyzed decarboxylation. CrGO was characterized by X-ray photoelectron spectroscopy and X-ray diffraction. CrGO can be well-dispersed in most polar solvents, facilitating its nanosheet thin film preparation via a spin coating solution process for device fabrication. A proof of concept nonvolatile organic transistor memory device using CrGO as the charge-trapping layer showed a larger memory window of over 60 V and a higher ON/OFF current ratio of up to 104 compared to that of the precursor, graphene oxide (GO).

AB - A facile method for the chemoselective reduction of graphene oxide (CrGO) has been developed via silver(I)-catalyzed decarboxylation. CrGO was characterized by X-ray photoelectron spectroscopy and X-ray diffraction. CrGO can be well-dispersed in most polar solvents, facilitating its nanosheet thin film preparation via a spin coating solution process for device fabrication. A proof of concept nonvolatile organic transistor memory device using CrGO as the charge-trapping layer showed a larger memory window of over 60 V and a higher ON/OFF current ratio of up to 104 compared to that of the precursor, graphene oxide (GO).

UR - https://www.scopus.com/pages/publications/84887925629

U2 - 10.1039/c3ra43819h

DO - 10.1039/c3ra43819h

M3 - 文章

AN - SCOPUS:84887925629

SN - 2046-2069

VL - 3

SP - 25788

EP - 25791

JO - RSC Advances

JF - RSC Advances

IS - 48

ER -

Chemoselective reduction of graphene oxide and its application in nonvolatile organic transistor memory devices

Abstract

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