Characterization of the EuZrO3/KTaO3 Interface: Tunable Carrier Density and Long-Range Spin Transport

Xiangyang Wei; Shuanhu Wang; Jiaxin Lv; Huapei Zhu; Hong Yan; Kexin Jin

doi:10.1021/acsanm.4c06643

Characterization of the EuZrO₃/KTaO₃ Interface: Tunable Carrier Density and Long-Range Spin Transport

Xiangyang Wei
, Shuanhu Wang
, Jiaxin Lv
, Huapei Zhu
, Hong Yan
, Kexin Jin

School of Physical Science and Technology

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Among the perovskite oxide family, KTaO₃ has recently attracted considerable interest as a versatile platform for the realization of two-dimensional electron gas. In this paper, we report a conducting interface between the EuZrO₃ film and the KTaO₃ (001) single crystal and demonstrate the wide controllable carrier density and long precession distance. The carrier density and mobility can be controlled by the deposition temperature and film thickness, and the change exceeds about 2 orders of magnitude. Additionally, we observed a negative magnetic resistance which occurs only when B_i < B_SO at low temperatures, indicating the dominance of weak localization in this region. The wide-range tunable carrier density and long spin precession distance (∼50.82 nm) in the intrinsic state demonstrate that the interface has the potential for spin transport.

Original language	English
Pages (from-to)	2006-2012
Number of pages	7
Journal	ACS Applied Nano Materials
Volume	8
Issue number	4
DOIs	https://doi.org/10.1021/acsanm.4c06643
State	Published - 31 Jan 2025

Keywords

EuZrO/KTaO interface
fabrication condition
Hall mobility
magnetotransport properties
oxide interfaces
two-dimensional electron gas

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10.1021/acsanm.4c06643

Cite this

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title = "Characterization of the EuZrO3/KTaO3 Interface: Tunable Carrier Density and Long-Range Spin Transport",

abstract = "Among the perovskite oxide family, KTaO3 has recently attracted considerable interest as a versatile platform for the realization of two-dimensional electron gas. In this paper, we report a conducting interface between the EuZrO3 film and the KTaO3 (001) single crystal and demonstrate the wide controllable carrier density and long precession distance. The carrier density and mobility can be controlled by the deposition temperature and film thickness, and the change exceeds about 2 orders of magnitude. Additionally, we observed a negative magnetic resistance which occurs only when Bi < BSO at low temperatures, indicating the dominance of weak localization in this region. The wide-range tunable carrier density and long spin precession distance (∼50.82 nm) in the intrinsic state demonstrate that the interface has the potential for spin transport.",

keywords = "EuZrO/KTaO interface, fabrication condition, Hall mobility, magnetotransport properties, oxide interfaces, two-dimensional electron gas",

author = "Xiangyang Wei and Shuanhu Wang and Jiaxin Lv and Huapei Zhu and Hong Yan and Kexin Jin",

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T1 - Characterization of the EuZrO3/KTaO3 Interface

T2 - Tunable Carrier Density and Long-Range Spin Transport

AU - Wei, Xiangyang

AU - Wang, Shuanhu

AU - Lv, Jiaxin

AU - Zhu, Huapei

AU - Yan, Hong

AU - Jin, Kexin

PY - 2025/1/31

Y1 - 2025/1/31

N2 - Among the perovskite oxide family, KTaO3 has recently attracted considerable interest as a versatile platform for the realization of two-dimensional electron gas. In this paper, we report a conducting interface between the EuZrO3 film and the KTaO3 (001) single crystal and demonstrate the wide controllable carrier density and long precession distance. The carrier density and mobility can be controlled by the deposition temperature and film thickness, and the change exceeds about 2 orders of magnitude. Additionally, we observed a negative magnetic resistance which occurs only when Bi < BSO at low temperatures, indicating the dominance of weak localization in this region. The wide-range tunable carrier density and long spin precession distance (∼50.82 nm) in the intrinsic state demonstrate that the interface has the potential for spin transport.

AB - Among the perovskite oxide family, KTaO3 has recently attracted considerable interest as a versatile platform for the realization of two-dimensional electron gas. In this paper, we report a conducting interface between the EuZrO3 film and the KTaO3 (001) single crystal and demonstrate the wide controllable carrier density and long precession distance. The carrier density and mobility can be controlled by the deposition temperature and film thickness, and the change exceeds about 2 orders of magnitude. Additionally, we observed a negative magnetic resistance which occurs only when Bi < BSO at low temperatures, indicating the dominance of weak localization in this region. The wide-range tunable carrier density and long spin precession distance (∼50.82 nm) in the intrinsic state demonstrate that the interface has the potential for spin transport.

KW - EuZrO/KTaO interface

KW - fabrication condition

KW - Hall mobility

KW - magnetotransport properties

KW - oxide interfaces

KW - two-dimensional electron gas

UR - https://www.scopus.com/pages/publications/85215854447

U2 - 10.1021/acsanm.4c06643

DO - 10.1021/acsanm.4c06643

M3 - 文章

AN - SCOPUS:85215854447

SN - 2574-0970

VL - 8

SP - 2006

EP - 2012

JO - ACS Applied Nano Materials

JF - ACS Applied Nano Materials

IS - 4

ER -

Characterization of the EuZrO₃/KTaO₃ Interface: Tunable Carrier Density and Long-Range Spin Transport

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Keywords

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