Characterization of detector-grade CdZnTe:Al crystals obtained by annealing

Pengfei Yu; Yihui He; Tao Wang; Wanqi Jie

doi:10.1016/j.jcrysgro.2011.03.036

Characterization of detector-grade CdZnTe:Al crystals obtained by annealing

Pengfei Yu, Yihui He, Tao Wang, Wanqi Jie

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Detector-grade CdZnTe:Al (CZT:Al) crystals were obtained by introducing Te antisites after annealing under Te atmosphere. Characterizations revealed that no inclusions were observed in both the as-grown and the annealed crystals. The resistivity and IR transmittance of annealed CZT:Al crystals were greatly enhanced. Moreover, (D⁰,X) peak representing the quality of crystal appeared in PL spectrum of annealed crystal. 120 h annealed CZT:Al crystal with the energy resolution of 8.19% and μτ value of 1.18×10^-3 cm²/V had the best detector performance.

Original language	English
Pages (from-to)	22-25
Number of pages	4
Journal	Journal of Crystal Growth
Volume	324
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.03.036
State	Published - 1 Jun 2011

Keywords

A1. Defects
A2. Bridgman technique
B1. Cadmium compounds
B2. Semiconducting IIVI materials

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10.1016/j.jcrysgro.2011.03.036

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title = "Characterization of detector-grade CdZnTe:Al crystals obtained by annealing",

abstract = "Detector-grade CdZnTe:Al (CZT:Al) crystals were obtained by introducing Te antisites after annealing under Te atmosphere. Characterizations revealed that no inclusions were observed in both the as-grown and the annealed crystals. The resistivity and IR transmittance of annealed CZT:Al crystals were greatly enhanced. Moreover, (D0,X) peak representing the quality of crystal appeared in PL spectrum of annealed crystal. 120 h annealed CZT:Al crystal with the energy resolution of 8.19% and μτ value of 1.18×10-3 cm2/V had the best detector performance.",

keywords = "A1. Defects, A2. Bridgman technique, B1. Cadmium compounds, B2. Semiconducting IIVI materials",

author = "Pengfei Yu and Yihui He and Tao Wang and Wanqi Jie",

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T1 - Characterization of detector-grade CdZnTe:Al crystals obtained by annealing

AU - Yu, Pengfei

AU - He, Yihui

AU - Wang, Tao

AU - Jie, Wanqi

PY - 2011/6/1

Y1 - 2011/6/1

N2 - Detector-grade CdZnTe:Al (CZT:Al) crystals were obtained by introducing Te antisites after annealing under Te atmosphere. Characterizations revealed that no inclusions were observed in both the as-grown and the annealed crystals. The resistivity and IR transmittance of annealed CZT:Al crystals were greatly enhanced. Moreover, (D0,X) peak representing the quality of crystal appeared in PL spectrum of annealed crystal. 120 h annealed CZT:Al crystal with the energy resolution of 8.19% and μτ value of 1.18×10-3 cm2/V had the best detector performance.

AB - Detector-grade CdZnTe:Al (CZT:Al) crystals were obtained by introducing Te antisites after annealing under Te atmosphere. Characterizations revealed that no inclusions were observed in both the as-grown and the annealed crystals. The resistivity and IR transmittance of annealed CZT:Al crystals were greatly enhanced. Moreover, (D0,X) peak representing the quality of crystal appeared in PL spectrum of annealed crystal. 120 h annealed CZT:Al crystal with the energy resolution of 8.19% and μτ value of 1.18×10-3 cm2/V had the best detector performance.

KW - A1. Defects

KW - A2. Bridgman technique

KW - B1. Cadmium compounds

KW - B2. Semiconducting IIVI materials

UR - http://www.scopus.com/inward/record.url?scp=79957790579&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2011.03.036

DO - 10.1016/j.jcrysgro.2011.03.036

M3 - 文章

AN - SCOPUS:79957790579

SN - 0022-0248

VL - 324

SP - 22

EP - 25

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Characterization of detector-grade CdZnTe:Al crystals obtained by annealing

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Keywords

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