Abstract
Detector-grade CdZnTe:Al (CZT:Al) crystals were obtained by introducing Te antisites after annealing under Te atmosphere. Characterizations revealed that no inclusions were observed in both the as-grown and the annealed crystals. The resistivity and IR transmittance of annealed CZT:Al crystals were greatly enhanced. Moreover, (D0,X) peak representing the quality of crystal appeared in PL spectrum of annealed crystal. 120 h annealed CZT:Al crystal with the energy resolution of 8.19% and μτ value of 1.18×10-3 cm2/V had the best detector performance.
Original language | English |
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Pages (from-to) | 22-25 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 324 |
Issue number | 1 |
DOIs | |
State | Published - 1 Jun 2011 |
Keywords
- A1. Defects
- A2. Bridgman technique
- B1. Cadmium compounds
- B2. Semiconducting IIVI materials