Cd1-xZnxTe: Growth and characterization of crystals for x-ray and gamma-ray detectors

Guoqiang Li; Wanqi Jie; Hui Hua; Zhi Gu

doi:10.1016/S0960-8974(03)90003-9

Cd_1-xZn_xTe: Growth and characterization of crystals for x-ray and gamma-ray detectors

Guoqiang Li
, Wanqi Jie
, Hui Hua
, Zhi Gu

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

The choice a suitable crystal growth method and a reasonable x value is of profound importance in the preparation of high quality Cd_1-xZn_xTe crystals for x-ray and gamma-ray detectors. The present paper reviews the evolution and development of Cd_1-xZn_xTe crystal growth for x-ray and gamma-ray detectors. At the same time, emphasis is put upon finding the relationship between the x value and the quality of the Cd_1-xZn_xTe. Three sets of Cd_1-xZn_xTe ingots with different x values, specifically 0.10, 0.15, and 0.20 were grown by the vertical Bridgman method (VBM) and characterized. Their x specification was then correlated with their dislocation densities, Te precipitates, inclusions, IR transmission, resistivities, and impurity concentrations, respectively. It was found that VBM Cd_0.85Zn_0.15Te as grown in this paper possessed the best choice of qualities with respect to defects and impurities.

Original language	English
Pages (from-to)	85-104
Number of pages	20
Journal	Progress in Crystal Growth and Characterization of Materials
Volume	46
Issue number	3
DOIs	https://doi.org/10.1016/S0960-8974(03)90003-9
State	Published - 2003

Keywords

CdZnTe
Characterization
IR transmission
Resistivity
Vertical Bridgman method

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10.1016/S0960-8974(03)90003-9

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@article{a841204b3fff48d1863b3232ef897458,

title = "Cd1-xZnxTe: Growth and characterization of crystals for x-ray and gamma-ray detectors",

abstract = "The choice a suitable crystal growth method and a reasonable x value is of profound importance in the preparation of high quality Cd1-xZnxTe crystals for x-ray and gamma-ray detectors. The present paper reviews the evolution and development of Cd1-xZnxTe crystal growth for x-ray and gamma-ray detectors. At the same time, emphasis is put upon finding the relationship between the x value and the quality of the Cd1-xZnxTe. Three sets of Cd1-xZnxTe ingots with different x values, specifically 0.10, 0.15, and 0.20 were grown by the vertical Bridgman method (VBM) and characterized. Their x specification was then correlated with their dislocation densities, Te precipitates, inclusions, IR transmission, resistivities, and impurity concentrations, respectively. It was found that VBM Cd0.85Zn0.15Te as grown in this paper possessed the best choice of qualities with respect to defects and impurities.",

keywords = "CdZnTe, Characterization, IR transmission, Resistivity, Vertical Bridgman method",

author = "Guoqiang Li and Wanqi Jie and Hui Hua and Zhi Gu",

year = "2003",

doi = "10.1016/S0960-8974(03)90003-9",

language = "英语",

volume = "46",

pages = "85--104",

journal = "Progress in Crystal Growth and Characterization of Materials",

issn = "0960-8974",

publisher = "Elsevier Ltd",

number = "3",

}

TY - JOUR

T1 - Cd1-xZnxTe

T2 - Growth and characterization of crystals for x-ray and gamma-ray detectors

AU - Li, Guoqiang

AU - Jie, Wanqi

AU - Hua, Hui

AU - Gu, Zhi

PY - 2003

Y1 - 2003

N2 - The choice a suitable crystal growth method and a reasonable x value is of profound importance in the preparation of high quality Cd1-xZnxTe crystals for x-ray and gamma-ray detectors. The present paper reviews the evolution and development of Cd1-xZnxTe crystal growth for x-ray and gamma-ray detectors. At the same time, emphasis is put upon finding the relationship between the x value and the quality of the Cd1-xZnxTe. Three sets of Cd1-xZnxTe ingots with different x values, specifically 0.10, 0.15, and 0.20 were grown by the vertical Bridgman method (VBM) and characterized. Their x specification was then correlated with their dislocation densities, Te precipitates, inclusions, IR transmission, resistivities, and impurity concentrations, respectively. It was found that VBM Cd0.85Zn0.15Te as grown in this paper possessed the best choice of qualities with respect to defects and impurities.

AB - The choice a suitable crystal growth method and a reasonable x value is of profound importance in the preparation of high quality Cd1-xZnxTe crystals for x-ray and gamma-ray detectors. The present paper reviews the evolution and development of Cd1-xZnxTe crystal growth for x-ray and gamma-ray detectors. At the same time, emphasis is put upon finding the relationship between the x value and the quality of the Cd1-xZnxTe. Three sets of Cd1-xZnxTe ingots with different x values, specifically 0.10, 0.15, and 0.20 were grown by the vertical Bridgman method (VBM) and characterized. Their x specification was then correlated with their dislocation densities, Te precipitates, inclusions, IR transmission, resistivities, and impurity concentrations, respectively. It was found that VBM Cd0.85Zn0.15Te as grown in this paper possessed the best choice of qualities with respect to defects and impurities.

KW - CdZnTe

KW - Characterization

KW - IR transmission

KW - Resistivity

KW - Vertical Bridgman method

UR - https://www.scopus.com/pages/publications/1842588563

U2 - 10.1016/S0960-8974(03)90003-9

DO - 10.1016/S0960-8974(03)90003-9

M3 - 文章

AN - SCOPUS:1842588563

SN - 0960-8974

VL - 46

SP - 85

EP - 104

JO - Progress in Crystal Growth and Characterization of Materials

JF - Progress in Crystal Growth and Characterization of Materials

IS - 3

ER -

Cd_1-xZn_xTe: Growth and characterization of crystals for x-ray and gamma-ray detectors

Abstract

Keywords

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