Capacitive coupling behaviors based on triple cation organic-inorganic hybrid perovskite memristor

Shaoxi Wang; Yuxuan Xiong; Xiangqi Dong; Jian Sha; Yupan Wu; Wei Li; Yucheng Wang

doi:10.1016/j.jallcom.2021.159884

Capacitive coupling behaviors based on triple cation organic-inorganic hybrid perovskite memristor

Shaoxi Wang
, Yuxuan Xiong
, Xiangqi Dong
, Jian Sha
, Yupan Wu
, Wei Li
, Yucheng Wang

School of Microelectronics

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Memristors are new type of circuit element with the characteristics of both integrated computing and storage, which can promote the development of artificial intelligence and memory- computing fusion technology. In this manuscript, a novel triple cation Organic-inorganic hybrid perovskite (OHP) based optoelectronic coupling memristors with structure of FTO/TiO₂/Cs_0.05(FA_xMA_1−x)_0.95PbBr_yI_3−y/Al were fabricated, hysteresis loops with low power consumption, high HRS/LRS ratio and obvious light response are presented. Besides, capacitive coupling behaviors are observed in current curves. By changing voltage or light condition, memristors can evolve from capacitive behavior to pure memristive behavior. Physical mechanisms are discussed to explain this phenomenon. This work opens up a way in improving the resistive switching performances of OHP memristors, and can be of great benefit to the potential application in neuromorphological analysis.

Original language	English
Article number	159884
Journal	Journal of Alloys and Compounds
Volume	874
DOIs	https://doi.org/10.1016/j.jallcom.2021.159884
State	Published - 5 Sep 2021

Keywords

Capacitive behavior
Perovskite
Physical mechanism
memristor

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10.1016/j.jallcom.2021.159884

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title = "Capacitive coupling behaviors based on triple cation organic-inorganic hybrid perovskite memristor",

abstract = "Memristors are new type of circuit element with the characteristics of both integrated computing and storage, which can promote the development of artificial intelligence and memory- computing fusion technology. In this manuscript, a novel triple cation Organic-inorganic hybrid perovskite (OHP) based optoelectronic coupling memristors with structure of FTO/TiO2/Cs0.05(FAxMA1−x)0.95PbBryI3−y/Al were fabricated, hysteresis loops with low power consumption, high HRS/LRS ratio and obvious light response are presented. Besides, capacitive coupling behaviors are observed in current curves. By changing voltage or light condition, memristors can evolve from capacitive behavior to pure memristive behavior. Physical mechanisms are discussed to explain this phenomenon. This work opens up a way in improving the resistive switching performances of OHP memristors, and can be of great benefit to the potential application in neuromorphological analysis.",

keywords = "Capacitive behavior, Perovskite, Physical mechanism, memristor",

author = "Shaoxi Wang and Yuxuan Xiong and Xiangqi Dong and Jian Sha and Yupan Wu and Wei Li and Yucheng Wang",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2021",

month = sep,

day = "5",

doi = "10.1016/j.jallcom.2021.159884",

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journal = "Journal of Alloys and Compounds",

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TY - JOUR

T1 - Capacitive coupling behaviors based on triple cation organic-inorganic hybrid perovskite memristor

AU - Wang, Shaoxi

AU - Xiong, Yuxuan

AU - Dong, Xiangqi

AU - Sha, Jian

AU - Wu, Yupan

AU - Li, Wei

AU - Wang, Yucheng

PY - 2021/9/5

Y1 - 2021/9/5

N2 - Memristors are new type of circuit element with the characteristics of both integrated computing and storage, which can promote the development of artificial intelligence and memory- computing fusion technology. In this manuscript, a novel triple cation Organic-inorganic hybrid perovskite (OHP) based optoelectronic coupling memristors with structure of FTO/TiO2/Cs0.05(FAxMA1−x)0.95PbBryI3−y/Al were fabricated, hysteresis loops with low power consumption, high HRS/LRS ratio and obvious light response are presented. Besides, capacitive coupling behaviors are observed in current curves. By changing voltage or light condition, memristors can evolve from capacitive behavior to pure memristive behavior. Physical mechanisms are discussed to explain this phenomenon. This work opens up a way in improving the resistive switching performances of OHP memristors, and can be of great benefit to the potential application in neuromorphological analysis.

AB - Memristors are new type of circuit element with the characteristics of both integrated computing and storage, which can promote the development of artificial intelligence and memory- computing fusion technology. In this manuscript, a novel triple cation Organic-inorganic hybrid perovskite (OHP) based optoelectronic coupling memristors with structure of FTO/TiO2/Cs0.05(FAxMA1−x)0.95PbBryI3−y/Al were fabricated, hysteresis loops with low power consumption, high HRS/LRS ratio and obvious light response are presented. Besides, capacitive coupling behaviors are observed in current curves. By changing voltage or light condition, memristors can evolve from capacitive behavior to pure memristive behavior. Physical mechanisms are discussed to explain this phenomenon. This work opens up a way in improving the resistive switching performances of OHP memristors, and can be of great benefit to the potential application in neuromorphological analysis.

KW - Capacitive behavior

KW - Perovskite

KW - Physical mechanism

KW - memristor

UR - https://www.scopus.com/pages/publications/85105333724

U2 - 10.1016/j.jallcom.2021.159884

DO - 10.1016/j.jallcom.2021.159884

M3 - 文章

AN - SCOPUS:85105333724

SN - 0925-8388

VL - 874

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

M1 - 159884

ER -

Capacitive coupling behaviors based on triple cation organic-inorganic hybrid perovskite memristor

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Keywords

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